polycrystalline diamond film
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2021 ◽  
Vol 2119 (1) ◽  
pp. 012120
Author(s):  
S M Tarkov ◽  
V A Antonov ◽  
S N Podlesny ◽  
A A Yemelyanov ◽  
A K Rebrov ◽  
...  

Abstract Polycrystalline diamond film optical and electrical properties are investigated after the growth on <001> and <111> Si substrate by gas-jet MPCVD deposition in the presence of nitrogen in the gas mixture. Negatively charged NV− center formation was observed at the ~1.0 ppm level with the substitutional nitrogen concentration of 70 ppm. A comparison with the IIa type monocrystalline diamond plates with implanted and annealed nitrogen atoms at the 90 ppm concentration shows three times higher NV center formation efficiency by gas-jet MPCVD deposition than by ion implantation. CW optically detected magnetic resonance (ODMR) demonstrates the NV contented polycrystalline film application in a quantum magnetometry.


2021 ◽  
Vol 1031 ◽  
pp. 178-183
Author(s):  
Elena Vysotina ◽  
Razhudin Rizakhanov ◽  
Sergey Sigalaev ◽  
Nikolay Polushin ◽  
Vadim Shokorov ◽  
...  

The need to create highly accurate pressure sensors that capable operate under extreme conditions in aviation, rocket and space equipment increases and becomes more relevant. The unique properties of diamond make it a promising material for microelectronic sensors. Sensitive elements of pressure sensors were developed where a resilient element is formed from silicon but resistance strain gauges are formed from a boron-doped polycrystalline diamond film.


2019 ◽  
Vol 126 (22) ◽  
pp. 223302
Author(s):  
Kazufumi Hata ◽  
Yasunori Tanaka ◽  
Yusuke Nakano ◽  
Takashi Arai ◽  
Yoshihiko Uesugi ◽  
...  

2019 ◽  
Vol 89 (2) ◽  
pp. 258
Author(s):  
В.А. Кукушкин

AbstractA method for calculation of the I – V characteristic is proposed for a detector of visible and near-IR electromagnetic radiation based on artificial diamond with allowance for vertical flow of electric current. The method can be used when the free-path length of carriers in diamond is less than the scale of variations in the concentration of carriers. The method is used to determine the following detector characteristics: the dependence of current on voltage, distribution of carrier concentration, and electric potential for a particular variant of a photodetector based on polycrystalline diamond film consisting of nanosized single crystals doped with boron.


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