Формирование селективного контакта BP/Si с помощью низкотемпературного плазмохимического осаждения
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For the first time, the possibility of forming boron phosphide layers by plasma-enhanced atomic-layer deposition at a temperature of 250 ° C has been shown. Also the possibility of their use as a selective hole contact to silicon for solar cell application has been experimentally demonstrated.
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2021 ◽
Vol 224
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pp. 111010
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2012 ◽
Vol 27
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pp. 074002
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2019 ◽
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pp. 109965
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pp. 2375-2378
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Vol 113
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pp. 18385-18390
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pp. 041101
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2014 ◽
Vol 75
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pp. 477-484
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