scholarly journals Формирование селективного контакта BP/Si с помощью низкотемпературного плазмохимического осаждения

Author(s):  
А.С. Гудовских ◽  
Д.А. Кудряшов ◽  
А.И. Баранов ◽  
А.В. Уваров ◽  
И.А. Морозов

For the first time, the possibility of forming boron phosphide layers by plasma-enhanced atomic-layer deposition at a temperature of 250 ° C has been shown. Also the possibility of their use as a selective hole contact to silicon for solar cell application has been experimentally demonstrated.

2019 ◽  
Vol 200 ◽  
pp. 109965 ◽  
Author(s):  
Harold Le Tulzo ◽  
Nathanaelle Schneider ◽  
Daniel Lincot ◽  
Frédérique Donsanti

2009 ◽  
Vol 113 (42) ◽  
pp. 18385-18390 ◽  
Author(s):  
Tina C. Li ◽  
Márcio S. Góes ◽  
Francisco Fabregat-Santiago ◽  
Juan Bisquert ◽  
Paulo R. Bueno ◽  
...  

2014 ◽  
Vol 75 ◽  
pp. 477-484 ◽  
Author(s):  
M. Moret ◽  
A. Abou Chaaya ◽  
M. Bechelany ◽  
P. Miele ◽  
Y. Robin ◽  
...  

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