Modelling of phase boundaries and melt flow in crucible-free silicon crystal growth using high-frequency heating

2017 ◽  
Vol 53 (4) ◽  
pp. 715-722
Author(s):  
K. Suvorovs ◽  
M. Plāte ◽  
J. Virbulis
Keyword(s):  
Crystal Growth ◽  
High Frequency ◽  
Silicon Crystal ◽  
Melt Flow ◽  
Phase Boundaries ◽  
Free Silicon ◽  
Frequency Heating

Unsteady 3D LES modeling of turbulent melt flow with AC travelling EM fields for a laboratory model of the CZ silicon crystal growth system

2009 ◽  
Vol 45 (4) ◽  
pp. 605-611
Author(s):  
A. Krauze ◽  
◽  
A. Rudevičs ◽  
A. Muižnieks ◽  
A. Sabanskis ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Silicon Crystal ◽  
Laboratory Model ◽  
Melt Flow ◽  
Growth System

Thermal stress induced void formation during 450 mm defect free silicon crystal growth and implications for wafer inspection

2013 ◽  
Vol 102 (8) ◽  
pp. 082108 ◽  
Author(s):  
E. Kamiyama ◽  
J. Vanhellemont ◽  
K. Sueoka ◽  
K. Araki ◽  
K. Izunome
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Silicon Crystal ◽  
Void Formation ◽  
Wafer Inspection ◽  
Free Silicon
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