Thermal stress induced void formation during 450 mm defect free silicon crystal growth and implications for wafer inspection

2013 ◽  
Vol 102 (8) ◽  
pp. 082108 ◽  
Author(s):  
E. Kamiyama ◽  
J. Vanhellemont ◽  
K. Sueoka ◽  
K. Araki ◽  
K. Izunome
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Silicon Crystal ◽  
Void Formation ◽  
Wafer Inspection ◽  
Free Silicon

Simulation of almost defect-free silicon crystal growth

2001 ◽  
Vol 231 (4) ◽  
pp. 442-447 ◽  
Author(s):  
Zhihong Wang ◽  
Robert A. Brown
Keyword(s):  
Crystal Growth ◽  
Silicon Crystal ◽  
Free Silicon

The development of an inspection system for defects in silicon crystal growth

2013 ◽  
Vol 20 (2) ◽  
pp. 224-226 ◽  
Author(s):  
Ya-Cheng Liu ◽  
Hsin-Yi Tsai ◽  
Min-Wei Hung ◽  
Kuo-Cheng Huang
Keyword(s):  
Crystal Growth ◽  
Silicon Crystal ◽  
Inspection System

Float-Zone silicon crystal growth at reduced RF frequencies

2012 ◽  
Vol 360 ◽  
pp. 43-46 ◽  
Author(s):  
H.-J. Rost ◽  
R. Menzel ◽  
A. Luedge ◽  
H. Riemann
Keyword(s):  
Crystal Growth ◽  
Silicon Crystal ◽  
Float Zone
Sign in / Sign up

Export Citation Format

Share Document