Numerical study and comparisons with experimental data for transient behaviour of phase boundaries during industrial FZ process for silicon crystal growth

2005 ◽  
Vol 275 (1-2) ◽  
pp. e561-e565 ◽  
Author(s):  
A. Rudevics ◽  
A. Muiznieks ◽  
H. Riemann ◽  
A. Luedge ◽  
G. Ratnieks ◽  
...  
Keyword(s):  
Experimental Data ◽  
Crystal Growth ◽  
Numerical Study ◽  
Silicon Crystal ◽  
Phase Boundaries ◽  
Transient Behaviour

Numerical study of transient behaviour of molten zone during industrial FZ process for large silicon crystal growth

2004 ◽  
Vol 266 (1-3) ◽  
pp. 54-59 ◽  
Author(s):  
A. Rudevičs ◽  
A. Muižnieks ◽  
G. Ratnieks ◽  
A. Mühlbauer ◽  
Th. Wetzel
Keyword(s):  
Crystal Growth ◽  
Numerical Study ◽  
Silicon Crystal ◽  
Molten Zone ◽  
Transient Behaviour

3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth

2020 ◽  
Vol 532 ◽  
pp. 125403
Author(s):  
Xue-Feng Han ◽  
Xin Liu ◽  
Satoshi Nakano ◽  
Hirofumi Harada ◽  
Yoshiji Miyamura ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Numerical Study ◽  
Silicon Crystal ◽  
Floating Zone

Numerical study of the effect of transverse magnetic field on cylindrical and hemispherical CZ crystal growth of silicon

2010 ◽  
Vol 46 (4) ◽  
pp. 393-402 ◽  
Author(s):  
F. Mokhtari ◽  
A. Bouabdallah ◽  
A. Merah ◽  
S. Hanchi ◽  
A. Alemany
Keyword(s):  
Magnetic Field ◽  
Crystal Growth ◽  
Transverse Magnetic Field ◽  
Numerical Study ◽  
Transverse Magnetic

Kinetics of the Crystallization of Potassium Sulfate

1993 ◽  
Vol 58 (8) ◽  
pp. 1848-1854 ◽  
Author(s):  
Miroslav Karel ◽  
Jaroslav Nývlt
Keyword(s):  
Experimental Data ◽  
Crystal Growth ◽  
Growth Rates ◽  
Potassium Sulfate ◽  
Kinetics Of

The kinetics of the crystallization of potassium sulfate has been determined using the MSMPR technique. Values of the nucleation and crystal growth rates evaluated from the experimental data are compared with the corresponding literature data.

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