scholarly journals Non-linear Current-Voltage Property across Σ5(210) Symmetric Tilt Boundary in Nb-Doped SrTiO3 Bicrystal

2004 ◽  
Vol 45 (7) ◽  
pp. 2112-2116 ◽  
Author(s):  
Masaru Nishi ◽  
Tomohito Tanaka ◽  
Katsuyuki Matsunaga ◽  
Yuichi Ikuhara ◽  
Takahisa Yamamoto
2002 ◽  
Vol 110 (1280) ◽  
pp. 310-313 ◽  
Author(s):  
Toshitaka OTA ◽  
Naoto YAMAUCHI ◽  
Keiji DAIMON ◽  
Yasuo HIKICHI ◽  
Hidetoshi MIYAZAKI ◽  
...  

2007 ◽  
Vol 42 (18) ◽  
pp. 7673-7677 ◽  
Author(s):  
Jui-Chao Kuo ◽  
Delphic Chen ◽  
Shih-Heng Tung ◽  
Ming-Hsiang Shih

2001 ◽  
Vol 693 ◽  
Author(s):  
Madhusudan Singh ◽  
Jaspirt Singh ◽  
Umesh Mishra

In this paper, we report calculations that show that a metal-polar semiconductor heterostructure can exhibit highly controllable non-linear current-voltage (I-V) characteristics. Change in barrier thickness can alter the characteristics from Schottky-like to ohmic in different bias regimes. The origin of these unusual effects is a large electric field (> 106 V/cm) and high sheet charge (∼1013 – 1014 cm-2) without doping, in the polar heterostructure. Theoretical calculation of the tunneling current density in these systems indicates that very interesting non-linear behaviour is shown by theseystems, ev en in the undoped case. Choice of suitable compositions of the materials and thicknesses can be used to tailor devices with desired characteristics.


1988 ◽  
Vol 22 (7) ◽  
pp. 1093-1096 ◽  
Author(s):  
F. Cosandey ◽  
Siu-Wai Chan ◽  
P. Stadelmann

2002 ◽  
Vol 4 (22) ◽  
pp. 5655-5662 ◽  
Author(s):  
P. C. P. Watts ◽  
W. K. Hsu ◽  
D. P. Randall ◽  
H. W. Kroto ◽  
D. R. M. Walton

2010 ◽  
Vol 405 (11) ◽  
pp. S176-S178 ◽  
Author(s):  
K. Kodama ◽  
M. Kimata ◽  
Y. Takahide ◽  
T. Terashima ◽  
H. Satsukawa ◽  
...  

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