Four-Terminal Polycrystalline-Silicon Thin-Film Transistors with High-k HfO2 Dielectric on Glass Substrate
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2013 ◽
Vol E96.C
(2)
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pp. 285-288
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2011 ◽
Vol 50
(2R)
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pp. 021401
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2016 ◽
Vol 55
(3S1)
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pp. 03CC01
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1986 ◽
Vol 7
(11)
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pp. 597-599
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