EM simulation assisted parameter extraction for the modeling of transferred-substrate InP HBTs

Author(s):  
Tom K. Johansen ◽  
Nils Weimann ◽  
Ralf Doerner ◽  
Maruf Hossain ◽  
Viktor Krozer ◽  
...  
2018 ◽  
Vol 10 (5-6) ◽  
pp. 700-708 ◽  
Author(s):  
Tom K. Johansen ◽  
Ralf Doerner ◽  
Nils Weimann ◽  
Maruf Hossain ◽  
Viktor Krozer ◽  
...  

AbstractIn this paper, an electromagnetic (EM) simulation assisted parameter extraction procedure is demonstrated for accurate modeling of down-scaled transferred-substrate InP HBTs. The external parasitic network associated with via transitions and device electrodes is carefully extracted from calibrated three-dimensional EM simulations up to 325 GHz. Following an on-wafer multi-line Through-Reflect-Line calibration procedure, the external parasitic network is de-embedded from the transistor measurements and the active device parameters are extracted in a reliable way. The small-signal model structure augmented with the distributed parasitic network provides accurate small-signal prediction up to 220 GHz.


2018 ◽  
Vol 150 ◽  
pp. 21-27 ◽  
Author(s):  
Jian Wei Ho ◽  
Johnson Wong ◽  
Percis Teena Christopher Subhodayam ◽  
Kwan Bum Choi ◽  
Divya Ananthanarayanan ◽  
...  

2000 ◽  
Vol 36 (4) ◽  
pp. 1421-1425 ◽  
Author(s):  
D. Ioan ◽  
T. Weiland ◽  
T. Wittig ◽  
I. Munteanu

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