FIT/PVL circuit-parameter extraction for general electromagnetic devices

2000 ◽  
Vol 36 (4) ◽  
pp. 1421-1425 ◽  
Author(s):  
D. Ioan ◽  
T. Weiland ◽  
T. Wittig ◽  
I. Munteanu
Keyword(s):  
Parameter Extraction ◽  
Circuit Parameter ◽  
Electromagnetic Devices

scholarly journals Equivalent circuit parameter extraction of low‐capacitance high‐damping PTs

2020 ◽  
Vol 56 (7) ◽  
pp. 347-350 ◽  
Author(s):  
J. Forrester ◽  
L. Li ◽  
J.N. Davidson ◽  
M.P. Foster ◽  
D.A. Stone ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Parameter Extraction ◽  
Circuit Parameter ◽  
Low Capacitance ◽  
Equivalent Circuit Parameter

scholarly journals A performance-enhanced planar Schottky diode for Terahertz applications: an electromagnetic modeling approach

2017 ◽  
Vol 9 (10) ◽  
pp. 1905-1913 ◽  
Author(s):  
Amir Ghobadi ◽  
Talha Masood Khan ◽  
Ozan Onur Celik ◽  
Necmi Biyikli ◽  
Ali Kemal Okyay ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Parameter Extraction ◽  
Design Parameters ◽  
Circuit Parameter ◽  
Electromagnetic Modeling ◽  
Deep Trench ◽  
Modeling Approach ◽  
Lumped Equivalent Circuit ◽  
Model Device ◽  
A Performance

In this paper, we present the electromagnetic modeling of a performance-enhanced planar Schottky diode for applications in terahertz (THz) frequencies. We provide a systematic simulation approach for analyzing our Schottky diode based on finite element method and lumped equivalent circuit parameter extraction. Afterward, we use the developed model to investigate the effect of design parameters of the Schottky diode on parasitic capacitive and resistive elements. Based on this model, device design has been improved by deep-trench formation in the substrate and using a closed-loop junction to reduce the amount of parasitic capacitance and spreading resistance, respectively. The results indicate that cut-off frequency can be improved from 4.1 to 14.1 THz. Finally, a scaled version of the diode is designed, fabricated, and well characterized to verify the validity of this modeling approach.

An analytic method for parameter extraction of InP HBTs small-signal model

Circuit World ◽  
2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Jincan Zhang ◽  
Min Liu ◽  
Jinchan Wang ◽  
Kun Xu
Keyword(s):  
Equivalent Circuit ◽  
High Speed ◽  
Extraction Procedure ◽  
Parameter Extraction ◽  
Circuit Parameter ◽  
Small Signal ◽  
Current Crowding ◽  
Extraction Technology ◽  
Content Type ◽  
S Parameters

Purpose High-speed Indium Phosphide (InP) HBTs have been widely used to design high-speed analog, digital and mixed-signal integrated circuits. The purpose of this study is to propose a new parameter extraction procedure for determining an improved T-topology small-signal equivalent circuit of InP heterojunction bipolar transistors (HBTs). Design/methodology/approach The alternating current crowding effect is considered through adding the intrinsic base capacitance in the small-signal equivalent circuit. All of the circuit parameters are extracted directly without using any approximation. Findings The extraction technique is more easily understood and clearer than other extraction methods, as the equations are derived from the S-parameters by peeling peripheral elements from small-signal models to get reduced ones and extracting each equivalent-circuit parameter using each equation. Originality/value To validate the presented parameter extraction technology, an n-p-n emitter-up InP HBT was analyzed adopting the method. Excellent agreement between measured and modeled S-parameters is obtained up to 40 GHz.

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