Design and Research of Soft-Tum -off- Based Solid-State DC Circuit Breakers with Ultra-Low Transient Overvoltage

Author(s):  
Yiwei Chen ◽  
Xuezhong Zhu
Electronics ◽  
2021 ◽  
Vol 10 (10) ◽  
pp. 1204
Author(s):  
Gul Ahmad Ludin ◽  
Mohammad Amin Amin ◽  
Hidehito Matayoshi ◽  
Shriram S. Rangarajan ◽  
Ashraf M. Hemeida ◽  
...  

This paper proposes a new and surge-less solid-state direct current (DC) circuit breaker in a high-voltage direct current (HVDC) transmission system to clear the short-circuit fault. The main purpose is the fast interruption and surge-voltage and over-current suppression capability analysis of the breaker during the fault. The breaker is equipped with series insulated-gate bipolar transistor (IGBT) switches to mitigate the stress of high voltage on the switches. Instead of conventional metal oxide varistor (MOV), the resistance–capacitance freewheeling diodes branch is used to bypass the high fault current and repress the over-voltage across the circuit breaker. The topology and different operation modes of the proposed breaker are discussed. In addition, to verify the effectiveness of the proposed circuit breaker, it is compared with two other types of surge-less solid-state DC circuit breakers in terms of surge-voltage and over-current suppression. For this purpose, MATLAB Simulink simulation software is used. The system is designed for the transmission of 20 MW power over a 120 km distance where the voltage of the transmission line is 220 kV. The results show that the fault current is interrupted in a very short time and the surge-voltage and over-current across the proposed breaker are considerably reduced compared to other topologies.


2020 ◽  
Vol 1004 ◽  
pp. 1010-1015
Author(s):  
Mitsuhiko Sagara ◽  
Keiji Wada ◽  
Shin-Ichi Nishizawa

This paper investigates a degradation of SiC power device for DC circuit breaker through repetitive unclamped inductive switching (UIS) tests. Being much lower compared with Si devices, it has been considered an application for DC circuit breakers using SiC semiconductor. In order to use for the DCbreaker, it is essential to evaluate the destructive endurance for UIS test.This paper evaluates a deterioration phenomenon by paying attention to the decrease of the gate voltage of the SiC-MOSFETs under the degradation at repetitive UIS test.


Author(s):  
Mian Wang ◽  
Mario Zaja ◽  
Jef Beerten ◽  
Dragan Jovcic ◽  
Dirk Van Hertem

Author(s):  
Gen Li ◽  
Jun Liang ◽  
Senthooran Balasubramaniam ◽  
Tibin Joseph ◽  
Carlos E. Ugalde-Loo ◽  
...  

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