Slew Rate Control of High-Voltage SiC MOSFETs using Gate Resistance vs. Intermediate Voltage Level

Author(s):  
Audrey Dearien ◽  
Shuang Zhao ◽  
Chris Farnell ◽  
H. Alan Mantooth
2016 ◽  
Vol 52 (3) ◽  
pp. 2368-2377 ◽  
Author(s):  
Deshang Sha ◽  
Qinwu Lin ◽  
Fulin You ◽  
Xiao Wang ◽  
Guo Xu

2014 ◽  
Vol 47 (3) ◽  
pp. 7190-7195
Author(s):  
M. Blank ◽  
T. Glück ◽  
A. Kugi ◽  
H-P. Kreuter

2015 ◽  
Vol 737 ◽  
pp. 247-251
Author(s):  
Fu Yun Zhu ◽  
Zhi Hui Lu ◽  
Hong Jun Ni ◽  
Shuai Shuai Lv ◽  
Xing Xing Wang

TGZ10A-40.5 wall bushing of high voltage switch cabinet from one company was taken as applied research object. Reference the development process of high voltage cable shielding technology, three samples were designed and produced depending on different sets of the shield system. The result show that: surfaces processed by the way that the inner (aluminum cylinder) and the outer (metal mesh ring) shielding components were coated with a semi-conductive material, made little sense to improve the withstand voltage level and reduce the partial discharge; surface processed by the way that inner shield component (aluminum cylinder) was coated with semi-conductive material, the outer shield component (metal mesh ring) was not coated with semi-conductive material, was obviously influenced the improvement of the withstand voltage level and reduction of the partial discharge, compared with traditional technology, the average start voltage of corona increased 23.8%, the average value of partial discharge dropped 27.7%.


2019 ◽  
Vol 52 (15) ◽  
pp. 85-90
Author(s):  
D. Büchl ◽  
W. Kemmetmuller ◽  
T. Glück ◽  
B. Deutschmann ◽  
A. Kugi

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