Parasitic Inductance Design Considerations to Suppress Gate Voltage Oscillation of Fast Switching Power Semiconductor Devices

2018 ◽  
Author(s):  
Yusuke Sugihara ◽  
Kimihiro Nanamori ◽  
Masayoshi Yamamoto ◽  
Yasuki Kanazawa
Keyword(s):  
Gate Voltage ◽  
Semiconductor Devices ◽  
Parasitic Inductance ◽  
Power Semiconductor ◽  
Voltage Oscillation ◽  
Switching Power ◽  
Fast Switching ◽  
Design Considerations ◽  
Power Semiconductor Devices

Switching Power Semiconductor Devices

1993 ◽  
pp. 17-109
Author(s):  
Robert Bausière ◽  
Francis Labrique ◽  
Guy Séguier
Keyword(s):  
Semiconductor Devices ◽  
Power Semiconductor ◽  
Switching Power ◽  
Power Semiconductor Devices

Residual Voids in Degassing Process of Encapsulation Gel for Power Semiconductor Devices

2014 ◽  
Vol 134 (6) ◽  
pp. 432-433
Author(s):  
Masahiro Sato ◽  
Akiko Kumada ◽  
Kunihiko Hidaka ◽  
Keisuke Yamashiro ◽  
Yuji Hayase ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Power Semiconductor ◽  
Power Semiconductor Devices
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