A Resonant Gate-Drive Circuit With Optically Isolated Control Signal and Power Supply for Fast-Switching and High-Voltage Power Semiconductor Devices

2013 ◽  
Vol 28 (11) ◽  
pp. 5423-5430 ◽  
Author(s):  
Hideaki Fujita
Keyword(s):  
High Voltage ◽  
Power Supply ◽  
Semiconductor Devices ◽  
Control Signal ◽  
Power Semiconductor ◽  
Fast Switching ◽  
Power Semiconductor Devices ◽  
Drive Circuit

scholarly journals Capacitive methods for testing of power semiconductor devices

2015 ◽  
Vol 28 (3) ◽  
pp. 495-505 ◽  
Author(s):  
Vaclav Papez ◽  
Jiri Hájek ◽  
Bedrich Kojecký
Keyword(s):  
High Voltage ◽  
Semiconductor Devices ◽  
Theoretical Estimation ◽  
Voltage Distribution ◽  
Power Semiconductor ◽  
Measured Voltage ◽  
Power Semiconductor Devices ◽  
Electrical Capacity ◽  
Resonance Principle ◽  
In Series

Electrical capacity of power semiconductor devices is quite an important parameter that can be utilized not only for testing a component itself, but it can also be applied practically; e.g. in series-connected high voltage devices. This paper first analyzes the theoretical voltage distribution on the bases of the polarized p-n junction, as well as the size of capacity. The measurement of the voltage-capacity dependence using the resonance principle is illustrated on the samples of 4kV and 6kV thyristors. The correspondence between theoretical estimation of the capacity, measured voltage capacity dependence based on the resonance principle and experimentally determined by injected charge proves the correctness of the applied procedures and assumptions.

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