scholarly journals Modeling Epitaxial Layer Growth from Gas Phase for Analysis of Influence of Changing Technological Process with Variation in Growth Zone Heating

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
E. L. Pankratov
Keyword(s):  
Heat Transfer ◽  
Gas Phase ◽  
Technological Process ◽  
Epitaxial Layer ◽  
Analytical Approach ◽  
Growth Zone ◽  
Layer Growth ◽  
Nonstationary Heat ◽  
Epitaxial Layers ◽  
Nonstationary Heat Transfer

Abstract In this paper, we analyze the nonstationary heat transfer during growth of epitaxial layers in epitaxy reactors from the gas phase. Based on this analysis, we formulate several recommendations on organization of heating of the growth zone for increasing homogeneity of epitaxial layers. We introduce an analytical approach for analysis of heat transfer during the growth of epitaxial layers from the gas phase. The approach gives a possibility to simultaneously take into account the nonlinearity of heat transfer, as well as changes of their parameters both in space and time.

On optimization of growth from gas phase in a vertical reactor with account native convection to improve properties of films

2016 ◽  
Vol 12 (4) ◽  
pp. 712-725 ◽  
Author(s):  
Evgeny L. Pankratov ◽  
Elena A. Bulaeva
Keyword(s):  
Gas Phase ◽  
Heat Transport ◽  
Induction Heating ◽  
Design Methodology ◽  
Analytical Approach ◽  
Growth Zone ◽  
Epitaxial Layers ◽  
Content Type ◽  
Time Parameters ◽  
Account Variation

Purpose The purpose of this paper is to: analyze the changing properties of epitaxial layers, manufactured in the considered reactor, with the changing parameters of the growth taking into account native convection; and development of the most common analytical approach to describe the technological process. Design/methodology/approach In this paper a vertical reactor for gas phase epitaxy is considered that consists of an external casing, a keeper of substrate with a substrate and a spiral around the casing in area of the growth zone to generate induction heating in order to activate the chemical reactions in the decay of reagents and the growth of the epitaxial layer by using the reagents. The authors introduce an analytical approach to analyze nonlinear mass and heat transport with account variation in space and time parameters. Findings The authors find conditions to improve properties of epitaxial layers. Originality/value Growth regimes at atmospheric and low pressure have been compared and analyzed for their influence of the native convection on the growth of the epitaxial layers. Accounting for the calculated results, recommendations have been formulated to improve the properties of the epitaxial layers.

Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor

2014 ◽  
Vol 778-780 ◽  
pp. 113-116 ◽  
Author(s):  
Albert A. Burk ◽  
D. Tsvetkov ◽  
Michael J. O'Loughlin ◽  
S. Ustin ◽  
L. Garrett ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Unit Area ◽  
Layer Growth ◽  
Epitaxial Layers ◽  
Market Penetration ◽  
Temperature Uniformity ◽  
Cycle Times ◽  
The Cost ◽  
Defect Densities ◽  
Initial Results

Latest results are presented for SiC-epitaxial growths employing a novel 6x150-mm/10x100-mm Warm-Wall Planetary Vapor-Phase Epitaxial (VPE) Reactor. The increased throughput offered by this reactor and 150-mm diameter wafers, is intended to reduce the cost per unit area for SiC epitaxial layers, increasing the market penetration of already successful commercial SiC Schottky and MOSFET devices [1]. Increased growth rates of 30-40 micron/hr and short <2 hr fixed-cycle times (including rapid heat-up and cool-down ramps), while maintaining desirable epitaxial layer quality were achieved. Increased quantities of 150-mm epitaxial wafers now allow statistical analysis of their epitaxial layer properties. Specular epitaxial layer morphology was obtained, with morphological defect densities <0.4 cm-2, consistent with projected 5x5 mm die yields averaging 93% for Si-face epitaxial layers between 10 and 30 microns thick. Intrawafer thickness and doping uniformity are good, averaging 1.7% and 5.1% respectively. Wafer-to-wafer doping variation has also been significantly reduced from ~12 [5] to <3% s/mean. Initial results for C-face growths show excellent morphology (97%) but poor doping uniformity (~16%). Wafer shape is relatively unchanged by epitaxial growth consistent with good epitaxial temperature uniformity.

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