High-quality MBE growth of AlχGa1-χ As-based THz quantum cascade lasers

Open Physics ◽  
2007 ◽  
Vol 5 (2) ◽  
Author(s):  
Tomas Roch ◽  
Aaron Andrews ◽  
Gernot Fasching ◽  
Alexander Benz ◽  
Werner Schrenk ◽  
...  
Keyword(s):  
Quantum Cascade Lasers ◽  
Interface Roughness ◽  
Ex Situ ◽  
Lasing Threshold ◽  
X Ray Diffraction ◽  
High Quality ◽  
Mbe Growth ◽  
Quantum Cascade ◽  
Thickness Tolerance ◽  
Cascade Lasers

AbstractHigh-quality GaAs-based quantum cascade laser (QCL) structures for the terahertz (THz) emission have been grown by solid source molecular-beam epitaxy. Ex-situ high-resolution x-ray diffraction shows that layer thickness and its control is the most critical growth aspect and that the lasing potential of the structure can be determined by the thickness accuracy of the layers. For our samples, the thickness tolerance for working lasing structures emitting approximately 100 μm was determined to be minimally above 1% for a 15 μm active region which was composed of 54.6 nm cascade cells. Increasing interface roughness adversely affects the lasing threshold and power.

scholarly journals Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers

Materials ◽  
2019 ◽  
Vol 12 (10) ◽  
pp. 1621 ◽  
Author(s):  
Piotr Gutowski ◽  
Iwona Sankowska ◽  
Tomasz Słupiński ◽  
Dorota Pierścińska ◽  
Kamil Pierściński ◽  
...  
Keyword(s):  
Active Region ◽  
Growth Temperature ◽  
Quantum Cascade Lasers ◽  
Growth Conditions ◽  
Interface Roughness ◽  
Reciprocal Space Mapping ◽  
Mbe Growth ◽  
Quantum Cascade ◽  
Free Material ◽  
Cascade Lasers

We investigate molecular beam epitaxy (MBE) growth conditions of micrometers-thick In0.52Al0.48As designed for waveguide of InGaAs/InAlAs/InP quantum cascade lasers. The effects of growth temperature and V/III ratio on the surface morphology and defect structure were studied. The growth conditions which were developed for the growth of cascaded In0.53Ga0.47As/In0.52Al0.48As active region, e.g., growth temperature of Tg = 520 °C and V/III ratio of 12, turned out to be not optimum for the growth of thick In0.52Al0.48As waveguide layers. It has been observed that, after exceeding ~1 µm thickness, the quality of In0.52Al0.48As layers deteriorates. The in-situ optical reflectometry showed increasing surface roughness caused by defect forming, which was further confirmed by high resolution X-ray reciprocal space mapping, optical microscopy and atomic force microscopy. The presented optimization of growth conditions of In0.52Al0.48As waveguide layer led to the growth of defect free material, with good optical quality. This has been achieved by decreasing the growth temperature to Tg = 480 °C with appropriate increasing V/III ratio. At the same time, the growth conditions of the cascade active region of the laser were left unchanged. The lasers grown using new recipes have shown lower threshold currents and improved slope efficiency. We relate this performance improvement to reduction of the electron scattering on the interface roughness and decreased waveguide absorption losses.

Correlation of the MBE growth temperature, material quality, and performance of quantum cascade lasers

2013 ◽  
Vol 378 ◽  
pp. 614-617 ◽  
Author(s):  
G. Monastyrskyi ◽  
A. Aleksandrova ◽  
M. Elagin ◽  
M.P. Semtsiv ◽  
W.T. Masselink ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Quantum Cascade Lasers ◽  
Mbe Growth ◽  
Material Quality ◽  
Quantum Cascade ◽  
And Performance ◽  
Cascade Lasers

scholarly journals Structural properties of multilayer heterostructure for quantum-cascade lasers grown by MBE growth

2018 ◽  
Vol 1124 ◽  
pp. 022005
Author(s):  
R R Reznik ◽  
N V Kryzhanovskaya ◽  
A E Zhukov ◽  
A I Khrebtov ◽  
Yu B Samsonenko ◽  
...  
Keyword(s):  
Structural Properties ◽  
Quantum Cascade Lasers ◽  
Mbe Growth ◽  
Quantum Cascade ◽  
Cascade Lasers

Importance of interface roughness induced intersubband scattering in mid-infrared quantum cascade lasers

2012 ◽  
Vol 101 (17) ◽  
pp. 171117 ◽  
Author(s):  
YenTing Chiu ◽  
Yamac Dikmelik ◽  
Peter Q. Liu ◽  
Nyan L. Aung ◽  
Jacob B. Khurgin ◽  
...  
Keyword(s):  
Quantum Cascade Lasers ◽  
Interface Roughness ◽  
Mid Infrared ◽  
Quantum Cascade ◽  
Cascade Lasers

scholarly journals Гетероструктуры одночастотных и двухчастотных квантово-каскадных лазеров

2018 ◽  
Vol 52 (6) ◽  
pp. 597
Author(s):  
А.В. Бабичев ◽  
А.С. Курочкин ◽  
Е.С. Колодезный ◽  
А.В. Филимонов ◽  
А.А. Усикова ◽  
...  
Keyword(s):  
Quantum Cascade Laser ◽  
Quantum Cascade Lasers ◽  
Basic Structure ◽  
Epitaxial Layers ◽  
Dual Frequency ◽  
X Ray Diffraction ◽  
Quantum Cascade ◽  
High Uniformity ◽  
Cascade Lasers ◽  
Good Agreement

AbstractThe results of development of the basic structure and technological conditions of growing heterostructures for single- and dual-frequency quantum-cascade lasers are reported. The heterostructure for a dual-frequency quantum-cascade laser includes cascades emitting at wavelengths of 9.6 and 7.6 μm. On the basis of the suggested heterostructure, it is possible to develop a quantum-cascade laser operating at a difference frequency of 8 THz. The heterostructures for the quantum-cascade laser are grown using molecularbeam epitaxy. The methods of X-ray diffraction and emission electron microscopy are used to study the structural properties of the fabricated heterostructures. Good agreement between the specified and realized thicknesses of the epitaxial layers and a high uniformity of the chemical composition and thicknesses of the epitaxial layers over the area of the heterostructure is demonstrated. A stripe-structured quantum-cascade laser is fabricated; its generation at a wavelength of 9.6 μm is demonstrated.

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