Pd/GaN(0001) interface properties

AbstractThis report concerns the properties of an interface formed between Pd films deposited onto the surface of (0001)-oriented n-type GaN at room temperature (RT) under ultrahigh vacuum. The surface of clean substrate and the stages of Pd-film growth were characterized in situ by X-ray photoelectron spectroscopy (XPS), scanning tunneling microscopy (STM), ultraviolet photoelectron spectroscopy (UPS), and low energy electron diffraction (LEED).As-deposited Pd films are grainy, cover the substrate surface uniformly and reproduce its topography. Electron affinity of the clean n-GaN surface amounts to 3.1 eV. The work function of the Pd-film is equal to 5.3 eV. No chemical interaction has been found at the Pd/GaN interface formed at RT. The Schottky barrier height of the Pd/GaN contact is equal to 1.60 eV.

Download Full-text

Structures of sulfur on TiO2() determined by scanning tunneling microscopy, X-ray photoelectron spectroscopy and low-energy electron diffraction

Surface Science ◽

10.1016/s0039-6028(00)00849-9 ◽

2001 ◽

Vol 470 (3) ◽

pp. 347-360 ◽

Cited By ~ 56

Author(s):

E.L.D. Hebenstreit ◽

W. Hebenstreit ◽

U. Diebold

Keyword(s):

Electron Diffraction ◽

Scanning Tunneling Microscopy ◽

Photoelectron Spectroscopy ◽

Low Energy ◽

Energy Electron ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

X Ray ◽

Low Energy Electron Diffraction ◽

Low Energy Electron

Download Full-text

A scanning tunneling microscopy, X-ray photoelectron spectroscopy and low-energy electron diffraction investigation of the BaTiO3(111) surface

Surface Science ◽

10.1016/s0039-6028(99)00626-3 ◽

1999 ◽

Vol 436 (1-3) ◽

pp. 121-130 ◽

Cited By ~ 13

Author(s):

C. Hagendorf ◽

K.-M. Schindler ◽

T. Doege ◽

H. Neddermeyer

Keyword(s):

Electron Diffraction ◽

Scanning Tunneling Microscopy ◽

Photoelectron Spectroscopy ◽

Low Energy ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Electron Diffraction Investigation ◽

X Ray ◽

Low Energy Electron Diffraction ◽

Low Energy Electron

Download Full-text

Growth and structure of thin platinum films deposited on Co(0001) studied by low-energy electron diffraction, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy and scanning tunneling microscopy

Surface Science ◽

10.1016/s0039-6028(00)00345-9 ◽

2000 ◽

Vol 457 (1-2) ◽

pp. 121-133 ◽

Cited By ~ 12

Author(s):

G.F. Cabeza ◽

P. Légaré ◽

A. Sadki ◽

N.J. Castellani

Keyword(s):

Electron Diffraction ◽

Photoelectron Spectroscopy ◽

Low Energy ◽

Scanning Tunneling ◽

Ultraviolet Photoelectron Spectroscopy ◽

Tunneling Microscopy ◽

X Ray ◽

Low Energy Electron Diffraction ◽

Low Energy Electron ◽

Thin Platinum

Download Full-text

Van Der Waals Epitaxy of GaSe on WSe2

MRS Proceedings ◽

10.1557/proc-263-291 ◽

1992 ◽

Vol 263 ◽

Cited By ~ 4

Author(s):

O. Lang ◽

R. Schlaf ◽

Y. Tomm ◽

C. Pettenkofer ◽

W. Jaegermann

Keyword(s):

Electron Diffraction ◽

Photoelectron Spectroscopy ◽

Van Der Waals ◽

Low Energy ◽

Scanning Tunneling ◽

X Ray Diffraction ◽

Tunneling Microscopy ◽

X Ray ◽

Low Energy Electron Diffraction ◽

Low Energy Electron

ABSTRACTGaSe layers were grown on the van der Waals (0001) planes of WSe2 (van der Waals epitaxy). The substrate (0001) plane was cleaned in UHV by heating to 400°C. GaSe was deposited from resistively heated Knudsen cells at T=300° C. After annealing at 450°C an epitaxial GaSe overlayer is formed as evidenced by X-ray diffraction, scanning tunneling microscopy, low energy electron diffraction and photoelectron spectroscopy.

Download Full-text