scholarly journals BROADBAND PERFECT METAMATERIAL ABSORBER ON THIN SUBSTRATE FOR X-BAND AND KU-BAND APPLICATIONS

2017 ◽  
Vol 73 ◽  
pp. 9-16 ◽  
Author(s):  
Gobinda Sen ◽  
Sk. Nurul Islam ◽  
Amartya Banerjee ◽  
Santanu Das
Author(s):  
Khalid Al-Badri

In this manuscript, a multi-band and low-profile metamaterial absorber with polarisation independence from 00 to 450 is presented. The proposed metamaterial structure is composed of a single ring with a rectangular patch, consisting of periodic unit cells with a size of 150mm × 250mm × 1.5mm. The structure exhibits three absorption peaks under normal incidence, which cover the X-band. According to the results, the desired material can excellently absorb the electromagnetic wave signal, with an outstanding absorption rate of about 95% at the microwave x-band frequency. The proposed structure shows three absorption bands where two of them exceed 90% absorption level. The results displayed a high Q-factor of 103.5 at a resonance frequency of 8.58 GHz and the figure of merit (FOM) is 98.4, which can be used to enhance the sensor sensing, narrowband band filter and image sensing. The proposed structure is fabricated, and experiments are carried out to validate the design principle. Strong agreements are observed between the measured and the corresponding simulated results.


Author(s):  
M J Hossain ◽  
M R I Faruque ◽  
M R Ahmed ◽  
S Abdullah ◽  
M T Islam

Author(s):  
Saeed Ur Rahman ◽  
Habib Ullah ◽  
Qunsheng Cao ◽  
Muhammad Kabir Khan ◽  
Naveed Ullah
Keyword(s):  

Author(s):  
Muhammet Tahir Guneser ◽  
Cihat Seker ◽  
Seda Kersolar ◽  
Ibrahim Telli ◽  
Sevda Dilek Dogangun ◽  
...  
Keyword(s):  
X Band ◽  

2021 ◽  
Vol 23 ◽  
pp. 104037
Author(s):  
Miao Pan ◽  
Huazhu Huang ◽  
Baodian Fan ◽  
Wenzhi Chen ◽  
Shuai Li ◽  
...  

Nanophotonics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 1337-1346
Author(s):  
Jin Tao ◽  
Zhongzhu Liang ◽  
Guang Zeng ◽  
Dejia Meng ◽  
David R. Smith ◽  
...  

Abstract Cointegration and coupling a perfect metamaterial absorber (PMA) together with a film bulk acoustic wave resonator (FBAR) in a monolithic fashion is introduced for the purpose of producing ultracompact uncooled infrared sensors of high sensitivity. An optimized ultrathin multilayer stack was implemented to realize the proposed device. It is experimentally demonstrated that the resonance frequency of the FBAR can be used efficiently as a sensor output as it downshifts linearly with the intensity of the incident infrared irradiation. The resulting sensor also achieves a high absorption of 88% for an infrared spectrum centered at a wavelength of 8.2 μm. The structure is compact and can be easily integrated on a CMOS-compatible chip since both the FBAR and PMA utilize and share the same stack of metal and dielectric layers.


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