scholarly journals Diamagnetic Susceptibility and Donor Binding Energy of Impurity States in Zinc Blende AlGaN/GaN Quantum Dot

2019 ◽  
Vol 6 (3) ◽  
Author(s):  
B. Prem Kumar ◽  
D. Prasanna ◽  
P. Elangovan
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Diamagnetic Susceptibility ◽  
Impurity States ◽  
Zinc Blende ◽  
Donor Binding Energy

Pressure effects on the donor binding energy in zinc-blende InGaN/GaN quantum dot

2009 ◽  
Vol 46 (6) ◽  
pp. 840-845 ◽  
Author(s):  
Congxin Xia ◽  
Tianxing Wang ◽  
Shuyi Wei
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Pressure Effects ◽  
Zinc Blende ◽  
Donor Binding Energy

Influence of Al Composition on Donor Impurity States in Self-Formed GaAs-AlxGa1-xAs Quantum Rings

2013 ◽  
Vol 380-384 ◽  
pp. 4284-4289
Author(s):  
Guang Xin Wang ◽  
Xiu Zhi Duan
Keyword(s):  
Binding Energy ◽  
Electric Field ◽  
Growth Direction ◽  
Uniform Electric Field ◽  
Donor Impurity ◽  
Impurity States ◽  
Quantum Rings ◽  
Mass Approximation ◽  
Donor Binding Energy ◽  
Special Value

Based on the the effective mass approximation and variational approach, the donor impurity states confined in self-formed GaAs/AlxGa1-xAs quantum rings (QRs) are investigated theoretically. A uniform electric field is applied along the growth direction of the QR. The different effective masses in the different regions of the GaAs/AlxGa1-xAs QR are taken into consideration. Numerical results show that the binding energy of a donor impurity increases gradually, reaches a maximum value, and then decreases quickly to the special value as the QR height decreases. Given a fixed QR size, the binding energy increases for the impurity located at the center of the QR when the Al composition increases. In addition, it can also be found that when the applied electric field strength increases, the donor binding energy increases for impurities localized at the negative z axis of the QR; however, the donor binding energy decreases slightly for impurities located at the center and positive z axis of the QR.

Stark Effect Dependence on Donor Binding Energy in a Wurtzite InxGa1–xN/GaN Quantum Dot

2013 ◽  
Vol 2 (2) ◽  
pp. 132-136
Author(s):  
M. Pattammal ◽  
A. John Peter
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Stark Effect ◽  
Donor Binding Energy

Stark effect of donor binding energy in a self-assembled GaAs quantum dot subjected to a tilted electric field

2012 ◽  
Vol 376 (42-43) ◽  
pp. 2712-2716 ◽  
Author(s):  
Zaiping Zeng ◽  
Christos S. Garoufalis ◽  
Sotirios Baskoutas ◽  
Andreas F. Terzis
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Electric Field ◽  
Stark Effect ◽  
Donor Binding Energy ◽  
Self Assembled ◽  
Gaas Quantum Dot

Exact Numerical Procedure for the Binding Energy of Hydrogen Impurities in Quantum Dots with Parabolic Confinements

2013 ◽  
Vol 475-476 ◽  
pp. 1355-1358
Author(s):  
Arnold Abramov
Keyword(s):  
Quantum Dots ◽  
Wave Function ◽  
Binding Energy ◽  
Quantum Dot ◽  
Excited States ◽  
Ground State ◽  
Qualitative Agreement ◽  
Numerical Procedure ◽  
Impurity States ◽  
Parabolic Confinement

In this paper we present exact numerical procedure to calculate the binding energy and wave function of impurity states in a quantum dot with parabolic confinement. The developed method allows control the accuracy of obtained results, as well as calculates the characteristics of not only ground state, but also of the excited states. Comparison of our results with data obtained by other methods is in quantitative and qualitative agreement. We studied the effects of impurity position on the binding energy.

THE EFFECTS OF QUANTUM CONFINEMENT ON THE BINDING ENERGY OF HYDROGENIC IMPURITIES IN A SPHERICAL QUANTUM DOT

2006 ◽  
Vol 20 (18) ◽  
pp. 1127-1134 ◽  
Author(s):  
A. JOHN PETER
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Shallow Donor ◽  
Donor Impurity ◽  
Hydrogenic Impurity ◽  
Spherical Quantum Dot ◽  
Impurity Position ◽  
Mass Approximation ◽  
Donor Binding Energy ◽  
Parabolic Confinement

The binding energy of a shallow hydrogenic impurity of a spherical quantum dot confined by harmonic oscillator-like and by rectangular well-like potentials, using a variational procedure within the effective mass approximation, has been determined. The calculations of the binding energy of the donor impurity as a function of the system geometry, and the donor impurity position have been investigated. The binding energy of shallow donor impurity depends not only on the quantum confinements but also on the impurity position. Our results reveal that (i) the donor binding energy decreases as the dot size increases irrespective of the impurity position, and (ii) the binding energy values of rectangular confinement are larger than the values of parabolic confinement and (iii) the rectangular confinement is better than the parabolic confinement in a spherical quantum dot.

scholarly journals External Electric Field Effect on Shallow Donor Impurity States in Zinc-Blende InxGa1−xN/GaN Symmetric Coupled Quantum Dots

2017 ◽  
Vol 2017 ◽  
pp. 1-7
Author(s):  
Guang-Xin Wang ◽  
Li-Li Zhang ◽  
Huan Wei
Keyword(s):  
Quantum Dots ◽  
Binding Energy ◽  
Electric Field ◽  
External Electric Field ◽  
Coupled Quantum Dots ◽  
Impurity Position ◽  
Zinc Blende ◽  
Maximum Value ◽  
Donor Binding Energy ◽  
Impurity Ion

Based on the effective-mass approximation and variational procedure, the ground-state donor binding energy in a cylindrical zinc-blende InxGa1-xN/GaN symmetric coupled quantum dots (SCQDs) is investigated in the presence of the external electric field. Numerical results show that the donor binding energy increases firstly until a maximum value, and then it begins to drop quickly in all the cases with decreasing the dot radius. As the thickness of left dot and right dot decreases, the donor binding energy increases monotonically at first, reaches a maximum value, and then drops rapidly for an impurity ion located at the right dot center and the middle barrier center. Moreover, the donor binding energy for an impurity ion located at the center of the left dot is insensitive to the variation of dot thickness for large dot thickness due to the Stark effect. Meanwhile, the impurity position plays an important role on the change of the donor binding energy under the external electric field. In particular, the impurity position corresponding to the peak value of the donor binding energy is shifted toward the left QD with increasing the external electric field strength.

The electric field effect on binding energy of hydrogenic impurity in zinc-blende GaN/AlxGa1−xN spherical quantum dot

2009 ◽  
Vol 404 (1) ◽  
pp. 122-126 ◽  
Author(s):  
Huiting Wu ◽  
Hailong Wang ◽  
Liming Jiang ◽  
Qian Gong ◽  
Songlin Feng
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Electric Field ◽  
Field Effect ◽  
Electric Field Effect ◽  
Hydrogenic Impurity ◽  
Spherical Quantum Dot ◽  
Zinc Blende
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