Stark effect of donor binding energy in a self-assembled GaAs quantum dot subjected to a tilted electric field

2012 ◽  
Vol 376 (42-43) ◽  
pp. 2712-2716 ◽  
Author(s):  
Zaiping Zeng ◽  
Christos S. Garoufalis ◽  
Sotirios Baskoutas ◽  
Andreas F. Terzis
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Electric Field ◽  
Stark Effect ◽  
Donor Binding Energy ◽  
Self Assembled ◽  
Gaas Quantum Dot

Stark Effect Dependence on Donor Binding Energy in a Wurtzite InxGa1–xN/GaN Quantum Dot

2013 ◽  
Vol 2 (2) ◽  
pp. 132-136
Author(s):  
M. Pattammal ◽  
A. John Peter
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Stark Effect ◽  
Donor Binding Energy

Binding Energy of Donor Impurity in a Rectangular Semiconductor GaAs Quantum Dot with Electric Field

2014 ◽  
Vol 687-691 ◽  
pp. 3407-3410
Author(s):  
Kang Yun ◽  
Sheng Wang ◽  
Xian Li Li
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Electric Field ◽  
Potential Model ◽  
Binding Energies ◽  
Zero Field ◽  
Donor Impurity ◽  
One Dimensional ◽  
Mass Approximation ◽  
Gaas Quantum Dot

Within the quasi-one-dimensional effective potential model and effective mass approximation, we calculate the ground and the first few excited state binding energies of a donor impurity in a rectangular quantum dot (RQD) in the presence of electric field. We discuss detailedly dependence of the binding energies on the impurity positions. The results show that the binding energy is the largest when the impurity is located at the center of RQD with zero field and is lowest when the impurity is located at the corner of the RQD. The peak strengths and positions of the probability density in RQD appear to be the critical control on such impurity-induced dependence. We believe our results can provide an indication for design of some photoelectric devices constructed based on GaAs RQD structures.

HYDROGENIC IMPURITY STATES IN WURTZITE ZnO/MgZnO QUANTUM DOT

2010 ◽  
Vol 24 (28) ◽  
pp. 2793-2801
Author(s):  
ZAIPING ZENG ◽  
SHUYI WEI ◽  
JINGBO WEI
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Electric Field ◽  
Ground State ◽  
Asymmetric Distribution ◽  
Electric Field Effect ◽  
Hydrogenic Impurity ◽  
Mass Approximation ◽  
Donor Binding Energy ◽  
The Right

Based on the effective-mass approximation, considering the built-in electric field effect due to the spontaneous and piezoelectric polarizations, the ground-state donor binding energy of a hygrogenic impurity in a cylindrical wurzite (WZ) ZnO / MgZnO strained quantum dot (QD) is investigated variationally. Numerical results show that the ground-state donor binding energy is highly dependent on the Mg composition, the impurity positions and the QD size. The built-in electric field also induces an asymmetric distribution of the ground-state donor binding energy with respect to the center of the QD. In particular, it is found that the ground-state donor binding energy is insensible to the dot height when the impurity is located at the right boundary of the WZ ZnO / MgZnO strained QD if the dot height is large.

Effect of electric field, dielectric screening and conduction band nonparabolicity of donor in a quantum dot

2018 ◽  
Vol 32 (10) ◽  
pp. 1850122 ◽  
Author(s):  
A. Rejo Jeice ◽  
Sr. Gerardin Jayam ◽  
K. S. Joseph Wilson
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Electric Field ◽  
Conduction Band ◽  
Spherical Quantum Dot ◽  
Donor Binding Energy ◽  
Hydrogenic Donor ◽  
Dielectric Screening ◽  
Parabolic Confinement ◽  
Band Nonparabolicity

The effect of electric field, dielectric screening, conduction band nonparabolicity and effective mass mismatch of a hydrogenic donor in a GaAs/Ga[Formula: see text]Al[Formula: see text]As spherical quantum dot is investigated by assuming parabolic confinement using variational method. In the present work we obtain the increase of binding energy by decreasing the dot size for certain dot radii (50 Å) and the screening function gives uniformly larger values for smaller dot size. The effect of electric field and temperature decrease the donor binding energy whereas the conduction band nonparabolicity leads to increased binding energy.

scholarly journals Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors

2013 ◽  
Vol 58 (1-2) ◽  
pp. 288-299 ◽  
Author(s):  
Hoon Ryu ◽  
Dukyun Nam ◽  
Bu-Young Ahn ◽  
JongSuk Ruth Lee ◽  
Kumwon Cho ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Tight Binding ◽  
Binding Study ◽  
Self Assembled ◽  
Gaas Quantum Dot

Functionalized Self-Assembled InAs/GaAs Quantum-Dot Structures Hybridized with Organic Molecules

2010 ◽  
Vol 20 (3) ◽  
pp. 469-475 ◽  
Author(s):  
Miaoxiang Chen ◽  
Kazufumi Kobashi ◽  
Bo Chen ◽  
Meng Lu ◽  
James M. Tour
Keyword(s):  
Quantum Dot ◽  
Organic Molecules ◽  
Self Assembled ◽  
Gaas Quantum Dot

scholarly journals Exciton Fine-Structure Splitting in Self-Assembled Lateral InAs/GaAs Quantum-Dot Molecular Structures

ACS Nano ◽  
2015 ◽  
Vol 9 (6) ◽  
pp. 5741-5749 ◽  
Author(s):  
Stanislav Fillipov ◽  
Yuttapoom Puttisong ◽  
Yuqing Huang ◽  
Irina A. Buyanova ◽  
Suwaree Suraprapapich ◽  
...  
Keyword(s):  
Fine Structure ◽  
Quantum Dot ◽  
Molecular Structures ◽  
Fine Structure Splitting ◽  
Structure Splitting ◽  
Self Assembled ◽  
Gaas Quantum Dot
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