scholarly journals MEASURING AND MODELING THE EFFECT OF LOW INTENSITY RADIATION ON DIGITAL CMOS ICS

2020 ◽  
Author(s):  
Dmitry Zvyagintsev ◽  
Alena Eliseeva ◽  
Nikita Kulikov ◽  
Igor Kharitonov ◽  
Lev Sambursky
Keyword(s):  
Dose Range ◽  
Critical Value ◽  
Mos Transistors ◽  
Digital Cmos ◽  
Low Intensity ◽  
Intensity Radiation

Based on the results of measuring the characteristics of CMOS ICs in the dose range up to 0.5 Mrad with an intensity of 0.1 rad / s, the changes in the concentration of defects Nit, Not were calculated, and the parameters of SPICE models of MOS transistors IC were identified. Circuitry modeling made it possible to estimate the critical value of the dose for the degradation of the parameters of the studied ICs.

The Regulatory Effect of Low-Intensity Radiation in the Near-Infrared Region on the Early Development of Zebrafish (Danio rerio)

BIOPHYSICS ◽  
2018 ◽  
Vol 63 (1) ◽  
pp. 109-115 ◽  
Author(s):  
V. I. Yusupov ◽  
N. B. Simonova ◽  
G. M. Chuiko ◽  
E. I. Golovkina ◽  
V. N. Bagratashvili
Keyword(s):  
Early Development ◽  
Danio Rerio ◽  
Near Infrared ◽  
Infrared Region ◽  
Regulatory Effect ◽  
Low Intensity ◽  
Near Infrared Region ◽  
Intensity Radiation
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