scholarly journals METHOD FOR CALCULATION OF MASK SPECIFICATION CONTRIBUTION TO LITHOGRAPHIC BUDGETS

2020 ◽  
Author(s):  
Nikita Balan ◽  
Vladimir Ivanov ◽  
Alexander Pankratov ◽  
Ekaterina Kharchenko
Keyword(s):  
Mask Pattern

In this work we consider the contribution of tolerances on the mask pattern quality to the error budgets of lithographic operations. A method for developing a photomask specification based on the lithography modeling is proposed.

The assessment of the impact of mask pattern shape variation on the OPC-modeling by using SEM-Contours from wafer and mask

2011 ◽  
Author(s):  
Daisuke Hibino ◽  
Yutaka Hojyo ◽  
Hiroyuki Shindo ◽  
Thuy Do ◽  
Aasutosh Dave ◽  
...  
Keyword(s):  
Mask Pattern ◽  
Shape Variation ◽  
Pattern Shape ◽  
The Impact

Fine pixel SEM image for EUV mask pattern 3D quality assurance based on lithography simulation

2010 ◽  
Author(s):  
Eiji Yamanaka ◽  
Masamitsu Itoh ◽  
Masaya Kato ◽  
Kusuo Ueno ◽  
Kyouhei Hayashi ◽  
...  
Keyword(s):  
Quality Assurance ◽  
Mask Pattern ◽  
Sem Image ◽  
Lithography Simulation

Mask pattern generator employing EPL technology

2003 ◽  
Author(s):  
Nobuyuki Yoshioka ◽  
Masaki Yamabe ◽  
Wataru Wakamiya ◽  
Nobuhiro Endo
Keyword(s):  
Pattern Generator ◽  
Mask Pattern

Development of extreme ultraviolet mask pattern inspection technology using projection electron beam optics

2013 ◽  
Vol 12 (2) ◽  
pp. 021003 ◽  
Author(s):  
Ryoichi Hirano ◽  
Hidehiro Watanabe ◽  
Susumu Iida ◽  
Tsuyoshi Amano ◽  
Tsuneo Terasawa ◽  
...  
Keyword(s):  
Electron Beam ◽  
Extreme Ultraviolet ◽  
Mask Pattern ◽  
Beam Optics

A Study on the Electrostatic Discharge (ESD) Defect in SOH Mask Pattern Cleaning

2016 ◽  
Vol 255 ◽  
pp. 182-185
Author(s):  
Dae Wan Ko ◽  
Tae Ho Hwang ◽  
Sok Hyung Han ◽  
Chang Hyun Kim ◽  
Byung Sul Ryu
Keyword(s):  
Metal Film ◽  
Correspondence Principle ◽  
Electrostatic Discharge ◽  
Mask Pattern ◽  
Defect Image

The application of the SOH Mask created a new defect. Defect image is similar to ESD defect, which occurred on POLY and METAL film. Stringent experiments were conducted in order to prove the correspondence principle of the defect of SOH and the mechanism of the ESD defect. Finally, it’s concluded the defect of SOH is equal to the ESD defect. ESD defect occurred also on SOH film, like POLY or METAL film.

Characterization of an integrated multibeam laser mask-pattern generation and dry etch processing total solution

2002 ◽  
Author(s):  
Alex H. Buxbaum ◽  
Melisa J. Buie ◽  
Brigitte C. Stoehr ◽  
Warren Montgomery ◽  
Scott E. Fuller
Keyword(s):  
Pattern Generation ◽  
Mask Pattern ◽  
Dry Etch

Printability of extreme ultraviolet lithography mask pattern defects for 22-40 nm half-pitch features

2010 ◽  
Author(s):  
Grant M. Kloster ◽  
Ted Liang ◽  
Todd R. Younkin ◽  
Ernisse S. Putna ◽  
Roman Caudillo ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
Extreme Ultraviolet Lithography ◽  
Mask Pattern ◽  
Ultraviolet Lithography
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