A Study on the Electrostatic Discharge (ESD) Defect in SOH Mask Pattern Cleaning

2016 ◽  
Vol 255 ◽  
pp. 182-185
Author(s):  
Dae Wan Ko ◽  
Tae Ho Hwang ◽  
Sok Hyung Han ◽  
Chang Hyun Kim ◽  
Byung Sul Ryu
Keyword(s):  
Metal Film ◽  
Correspondence Principle ◽  
Electrostatic Discharge ◽  
Mask Pattern ◽  
Defect Image

The application of the SOH Mask created a new defect. Defect image is similar to ESD defect, which occurred on POLY and METAL film. Stringent experiments were conducted in order to prove the correspondence principle of the defect of SOH and the mechanism of the ESD defect. Finally, it’s concluded the defect of SOH is equal to the ESD defect. ESD defect occurred also on SOH film, like POLY or METAL film.

The method of replication affects metal film granularity and resolution

1989 ◽  
Vol 47 ◽  
pp. 708-709
Author(s):  
George C. Ruben
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Film Thickness ◽  
Single Molecule ◽  
Metal Film ◽  
Vertical Surface ◽  
High Resolution Imaging ◽  
Controllable Factors ◽  
Resolution Imaging

Single molecule resolution in electron beam sensitive, uncoated, noncrystalline materials has been impossible except in thin Pt-C replicas ≤ 150Å) which are resistant to the electron beam destruction. Previously the granularity of metal film replicas limited their resolution to ≥ 20Å. This paper demonstrates that Pt-C film granularity and resolution are a function of the method of replication and other controllable factors. Low angle 20° rotary , 45° unidirectional and vertical 9.7±1 Å Pt-C films deposited on mica under the same conditions were compared in Fig. 1. Vertical replication had a 5A granularity (Fig. 1c), the highest resolution (table), and coated the whole surface. 45° replication had a 9Å granulartiy (Fig. 1b), a slightly poorer resolution (table) and did not coat the whole surface. 20° rotary replication was unsuitable for high resolution imaging with 20-25Å granularity (Fig. 1a) and resolution 2-3 times poorer (table). Resolution is defined here as the greatest distance for which the metal coat on two opposing faces just grow together, that is, two times the apparent film thickness on a single vertical surface.

Electric Shock and Safety Evaluation for Electrostatic Discharge from Human

2017 ◽  
Vol 137 (4) ◽  
pp. 229-235
Author(s):  
Yoshinori Taka ◽  
Akimasa Hirata ◽  
Kenichi Yamazaki ◽  
Osamu Fujiwara
Keyword(s):  
Electric Shock ◽  
Electrostatic Discharge ◽  
Safety Evaluation

AlCu Pattern Generation on 3D StructuredWafer Using Multi Level Exposure Method on Electrodeposited Polymer Material

2003 ◽  
Vol 766 ◽  
Author(s):  
Vineet Sharma ◽  
Arief B. Suriadi ◽  
Frank Berauer ◽  
Laurie S. Mittelstadt
Keyword(s):  
Line Width ◽  
Metal Film ◽  
Focal Depth ◽  
Cost Effective ◽  
Pattern Generation ◽  
Promising Technique ◽  
Critical Dimensions ◽  
Exposure Method ◽  
Multi Level ◽  
3D Surfaces

AbstractNormal photolithography tools have focal depth limitations and are unable to meet the expectations of high resolution photolithography on highly topographic structures. This paper shows a cost effective and promising technique of combining two different approaches to achieve critical dimensions of traces on slope pattern continuity on highly topographic structures. Electrophoretically deposited photoresist is used on 3-D structured wafers. This photoresist coating technique is fairly known in the MEMS industries to achieve uniform and conformal photoresist films on 3D surfaces. Multi step exposures are used to expose electrophoretically deposited photoresist. AlCu (Cu-0.5%), 0.47-0.53 μm thick metal film is deposited on 3D structured silicon substrate to plate photoresist. By combining these two novel methods, metal (AlCu) traces of 75 μm line width and 150 μm pitch (from top flat to down the slope) have been demonstrated on isotropically etched 350 μm deep trenches with 5-10% line width loss.

Sound as a transverse wave

2017 ◽  
Vol 13 (1) ◽  
pp. 4522-4534
Author(s):  
Armando Tomás Canero
Keyword(s):  
Quantum Mechanics ◽  
Gravitational Waves ◽  
Longitudinal Wave ◽  
Transverse Wave ◽  
Sound Propagation ◽  
Correspondence Principle ◽  
Classical Mechanics ◽  
Wave Model ◽  
Scientific Experiments

This paper presents sound propagation based on a transverse wave model which does not collide with the interpretation of physical events based on the longitudinal wave model, but responds to the correspondence principle and allows interpreting a significant number of scientific experiments that do not follow the longitudinal wave model. Among the problems that are solved are: the interpretation of the location of nodes and antinodes in a Kundt tube of classical mechanics, the traslation of phonons in the vacuum interparticle of quantum mechanics and gravitational waves in relativistic mechanics.

Conversion of a D-Mode FET to an E-Mode FET via Electrostatic Discharge in a GaAs Power Amplifier Duplexer Module

2013 ◽  
Author(s):  
Rose Emergo ◽  
Steve Brockett
Keyword(s):  
Cross Section ◽  
Power Amplifier ◽  
Electrostatic Discharge ◽  
Fault Isolation ◽  
Design Change ◽  
Eds Analysis ◽  
Defect Simulation

Abstract This paper outlines the systematic isolation of an electrostatic discharge defect on a depletion-mode FET. Topics covered are fault isolation, FIB-STEM cross-section and EDS analysis, and defect simulation. Multiple GaAs PA devices were submitted for analysis after failing different reliability stresses. Fault isolation revealed ESD damage on a DFET connected to the VMODE0 pin. Simulation of the failure showed that, most likely, the defect was caused by CDM stress. A design change of inserting a resistor between the VMODE0 pin and the DFET made the device more robust against CDM stress.

A Methodology for Characterizing System-Level ESD Sensitivity

2004 ◽  
Author(s):  
Marie-Pascale Chagny ◽  
John A. Naoum
Keyword(s):  
Electrostatic Discharge ◽  
Computer Systems ◽  
Electronic Equipment ◽  
Experimental Methodology ◽  
Computer Users ◽  
System Level ◽  
Permanent Damage ◽  
Design Improvement ◽  
Desktop Computers

Abstract Over the years, failures induced by an electrostatic discharge (ESD) have become a major concern for semiconductor manufacturers and electronic equipment makers. The ESD events that cause destructive failures have been studied extensively [1, 2]. However, not all ESD events cause permanent damage. Some events lead to recoverable failures that disrupt system functionality only temporarily (e.g. reboot, lockup, and loss of data). These recoverable failures are not as well understood as the ones causing permanent damage and tend to be ignored in the ESD literature [3, 4]. This paper analyzes and characterizes how these recoverable failures affect computer systems. An experimental methodology is developed to characterize the sensitivity of motherboards to ESD by simulating the systemlevel ESD events induced by computer users. The manuscript presents a case study where this methodology was used to evaluate the robustness of desktop computers to ESD. The method helped isolate several weak nets contributing to the failures and identified a design improvement. The result was that the robustness of the systems improved by a factor of 2.

Characterization of CMOS Structures (0.6 µm process) Submitted to HBM and COM ESD Stress Tests

1997 ◽  
Author(s):  
G. Meneghesso ◽  
E. Zanoni ◽  
P. Colombo ◽  
M. Brambilla ◽  
R. Annunziata ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Electrostatic Discharge ◽  
Stress Test ◽  
Complete Characterization ◽  
Stress Tests ◽  
Test Procedures ◽  
Emission Microscopy ◽  
Fast Rise ◽  
Scanning Electron

Abstract In this work, we present new results concerning electrostatic discharge (ESD) robustness of 0.6 μm CMOS structures. Devices have been tested according to both HBM and socketed CDM (sCDM) ESD test procedures. Test structures have been submitted to a complete characterization consisting in: 1) measurement of the tum-on time of the protection structures submitted to pulses with very fast rise times; 2) ESD stress test with the HBM and sCDM models; 3) failure analysis based on emission microscopy (EMMI) and Scanning Electron Microscopy (SEM).

Electrical Failure and Damage Analysis of Multi-Layer Metal Films on Flexible Substrate during Cyclic Bending Deformation

2011 ◽  
Author(s):  
Byoung-Joon Kim ◽  
Hae-A-Seul Shin ◽  
In-Suk Choi ◽  
Young-Chang Joo
Keyword(s):  
Fatigue Resistance ◽  
Electrical Resistance ◽  
Metal Film ◽  
Flexible Substrate ◽  
Resistance Change ◽  
Cyclic Bending ◽  
Capping Layer ◽  
Bending Strain ◽  
Cu Film ◽  
Electrical Resistance Change

Abstract The electrical resistance Cu film on flexible substrate was investigated in cyclic bending deformation. The electrical resistance of 1 µm thick Cu film on flexible substrate increased up to 120 % after 500,000 cycles in 1.1 % tensile bending strain. Crack and extrusion were observed due to the fatigue damage of metal film. Low bending strain did not cause any damage on metal film but higher bending strain resulted in severe electrical and mechanical damage. Thinner film showed higher fatigue resistance because of the better mechanical property of thin film. Cu film with NiCr under-layer showed poorer fatigue resistance in tensile bending mode. Ni capping layer did not improve the fatigue resistance of Cu film, but Al capping layer suppressed crack formation and lowered electrical resistance change. The NiCr under layer, Ni capping layer, and Al capping layer effect on electrical resistance change of Cu film was compared with Cu only sample.

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