scholarly journals Natural diamond growth conditions recorded by their internal structures

Author(s):  
J C Walmsley ◽  
A R Lang

Interest in the defects and impurities in natural diamond, which are found in even the most perfect stone, is driven by the fact that diamond growth occurs at a depth of over 120Km. They display characteristics associated with their origin and their journey through the mantle to the surface of the Earth. An optical classification scheme for diamond exists based largely on the presence and segregation of nitrogen. For example type Ia, which includes 98% of all natural diamonds, contain nitrogen aggregated into small non-paramagnetic clusters and usually contain sub-micrometre platelet defects on {100} planes. Numerous transmission electron microscope (TEM) studies of these platelets and associated features have been made e.g. . Some diamonds, however, contain imperfections and impurities that place them outside this main classification scheme. Two such types are described.First, coated-diamonds which possess gem quality cores enclosed by a rind that is rich in submicrometre sized mineral inclusions. The transition from core to coat is quite sharp indicating a sudden change in growth conditions, Figure 1. As part of a TEM study of the inclusions apatite has been identified as a major constituent of the impurity present in many inclusion cavities, Figure 2.


Author(s):  
D.P. Malta ◽  
E.A. Fitzgerald ◽  
J.B. Posthill ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
...  

A large effort continues in the development of diamond growth technologies for the production of electronic-grade diamond epitaxy. Diamond has several properties such as a wide band gap (5.48 eV) and high thermal conductivity (2000 W m-1K-1) that make it desirable for electronic applications. Characterization of diamond with cathodoluminescence (CL) spectroscopy yields information on impurity and defect distributions with both spatial and energy resolution, providing insight into the growth process.Diamond films were grown by plasma-enhanced chemical vapor deposition (PECVD) on natural type Ia 1mm × 1mm × 0.25mm diamond substrates. The results of microstructural studies on this type substrate are discussed elsewhere in these proceedings. Two films were selected for CL analysis based on their strikingly different surface morphologies but similar growth conditions. Both were grown for 6 hours at a substrate temperature of ∽ 750°C and a pressure of 5 Torr. The gas mixtures were varied: CO/CH4/H2 was used in one case and CH4/H2 in the other.


1994 ◽  
Vol 339 ◽  
Author(s):  
T. P. Humphreys ◽  
J. B. Posthill ◽  
D. P. Malta ◽  
R. E. Thomas ◽  
R. A. Rudder ◽  
...  

ABSRACTA novel substrate preparation procedure which can be employed to remove the original surface from as-received C(001) natural diamond substrates has been developed. A description of the various substrate processing steps which includes, low-energy ion implantation of C and O, high-temperature annealing, electrochemical etching and surface plasmas treatments is presented. Also demonstrated is the growth of topographically excellent homoepitaxial films by rf-plasma-enhanced chemical vapor deposition using water/ethanol mixtures on C(001) substrates.


2020 ◽  
Vol 32 (1) ◽  
pp. 41-55
Author(s):  
Aleksei Chepurov ◽  
Valery Sonin ◽  
Jean-Marie Dereppe ◽  
Egor Zhimulev ◽  
Anatoly Chepurov

Abstract. The origin and evolution of metal melts in the Earth's mantle and their role in the formation of diamond are the subject of active discussion. It is widely accepted that portions of metal melts in the form of pockets can be a suitable medium for diamond growth. This raises questions about the role of silicate minerals that form the walls of these pockets and are present in the volume of the metal melt during the growth of diamonds. The aim of the present work was to study the crystallization of diamond in a complex heterogeneous system: metal-melt–basalt–carbon. The experiments were performed using a multianvil high-pressure apparatus of split-sphere type (BARS) at a pressure of 5.5 GPa and a temperature of 1500 ∘C. The results demonstrated crystallization of diamond in metal melt together with garnet and clinopyroxene, whose chemical compositions are similar to those of eclogitic inclusions in natural diamond. We show that the presence of silicates in the crystallization medium does not reduce the chemical ability of metal melts to catalyze the conversion of graphite into diamond, and, morphologically, diamond crystallizes mainly in the form of a cuboctahedron. When the content of the silicate material in the system exceeds 5 wt %, diamond forms parallel-growth aggregates, but 15 wt % of silicate phases block the crystallization chamber, preventing the penetration of metallic melt into them, thus interrupting the growth of diamond. We infer that the studied mechanism of diamond crystallization can occur at lower-mantle conditions but could also have taken place in the ancient continental mantle of the Earth, under reducing conditions that allowed the stability of Fe–Ni melts.


2007 ◽  
Vol 101 (1) ◽  
pp. 014904 ◽  
Author(s):  
J. C. Arnault ◽  
S. Delclos ◽  
S. Saada ◽  
N. Tranchant ◽  
Ph. Bergonzo

1989 ◽  
Vol 162 ◽  
Author(s):  
M. W. Geis

ABSTRACTDiamond has an electric-field breakdown 20 times that of Si and GaAs, and a saturated velocity twice that of Si. This results in a predicted cut off frequency for high-power diamond transistors 40 times that of similar devices made of Si or GaAs. Boron is the only known impurity that can be used to lightly dope diamond. This p-type dopant has an activation energy of 0.3 to 0.4 eV, which results in high-resistivity material that is undesirable for devices. However, heavily boron doped diamond has a very small activation energy and a low resistivity and is of device quality. Transistors can be designed that use only undoped and heavily doped diamond. One of the steps in a device fabrication sequence is homoepitaxial diamond growth. Lightly and heavily doped homoepitaxial diamond films were characterized by scanning and transmission electron microscopy, x-ray diffraction, measurements of resistivity as a function of temperature, and secondary ion mass spectroscopy. It was found that under appropriate growth conditions these films are of device quality.


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