In-situ metrology for process control and growth kinetics analysis of complex semiconductor materials

The extended crystallographic defects introduced into some oxide catalysts under operating conditions may be a consequence and accommodation of the changes produced by the catalytic activity, rather than always being the origin of the reactivity. Operation without such defects has been established for the commercially important tellurium molybdate system. in addition it is clear that the point defect density and the electronic structure can both have a significant influence on the chemical properties and hence on the effectiveness (activity and selectivity) of the material as a catalyst. SEM/probe techniques more commonly applied to semiconductor materials, have been investigated to supplement the information obtained from in-situ environmental cell HVEM, ultra-high resolution structure imaging and more conventional AEM and EPMA chemical microanalysis.

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Ultrasonic monitoring of recrystallization: an example of in-situ process control with NDE

10.31274/rtd-180813-10978 ◽

2003 ◽

Author(s):

Guizhong Liu

Keyword(s):

Process Control ◽

Ultrasonic Monitoring

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Study of deposition parameters and growth kinetics of ZnO deposited by aerosol assisted chemical vapor deposition

RSC Advances ◽

10.1039/d1ra03251h ◽

2021 ◽

Vol 11 (30) ◽

pp. 18493-18499

Author(s):

Sergio Sánchez-Martín ◽

S. M. Olaizola ◽

E. Castaño ◽

E. Urionabarrenetxea ◽

G. G. Mandayo ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Growth Kinetics ◽

Vapor Deposition ◽

Chemical Vapor ◽

Kinetics Analysis ◽

Deposition Parameters ◽

Kinetics Of

Impact of deposition parameters, microstructure and growth kinetics analysis of ZnO grown by Aerosol-assisted Chemical Vapor Deposition (AACVD).

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Nanostructure Growth Supported by In Situ RHEED Evaluation

Materials Science Forum ◽

10.4028/www.scientific.net/msf.885.234 ◽

2017 ◽

Vol 885 ◽

pp. 234-238

Author(s):

Péter Kucsera ◽

Tamás Sándor ◽

Gusztáv Varga Tényi ◽

Márton Csutorás ◽

Gergely Bátori ◽

...

Keyword(s):

Growth Kinetics ◽

In Situ Monitoring ◽

Nanostructure Formation

The in-situ monitoring of the MBE grown nanostructures can be carried out using the RHEED method. During the droplet epitaxal growth, the observation of the nanostructure formation is very important to understand the growth kinetics. In the present work, a novel in-situ RHEED evaluation and further MBE related developments are introduced, with which the quality of the nanostructure preparation can be improved.

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