Resolution of Damaged Metallization on Highly Complex Semiconductor Device

The paper focused on the resolution of damaged metallization during assembly process that lead to gross open-short (O/S) rejections during functional testing of a highly complex semiconductor package. Numerous batches were put on hold due to not meeting the specification assigned for the short contact test. Design of experiments (DOE) on assembly processes were conducted and eventually identified the reject as an electrostatic discharge (ESD) related failure. Corrective actions and ESD controls significantly reduced the occurrence of damaged metallization with around 85% reduction.

Bio-proton coupled semiconductor/metal-complex hybrid photoelectrocatalytic interface for efficient CO2 reduction

Aimed at high-efficiency biomimetic CO2 photoelectrochemical conversion, a bio-proton coupling metal-complex/semiconductor hybrid photoelectrocatalytic interface (Ru-BNAH/TiO2/Cu2O) was constructed by covalently modifying an in situ proton-transfer functionized molecular catalyst (Ru-BNAH) on the surface of a TiO2/Cu2O composite semiconductor substrate electrode.