scholarly journals Determining the deformation potential constant Ξd in n-Si by the method of piezoresistance

2011 ◽  
Vol 15 (2) ◽  
Author(s):  
S. V. Luniov ◽  
S. A. Fedosov
Keyword(s):  
Deformation Potential ◽  
Potential Constant

Deformation-potential constant for Γ-L transitions in GaSb

1971 ◽  
Vol 7 (21) ◽  
pp. 634 ◽  
Author(s):  
Ernst Bonek ◽  
H.A. Hillbrand
Keyword(s):  
Deformation Potential ◽  
Potential Constant

On the deformation potential constant of the conduction band in InSb

1971 ◽  
Vol 44 (1) ◽  
pp. 293-303 ◽  
Author(s):  
I. M. Tsidilkovskii ◽  
K. M. Demchuk
Keyword(s):  
Conduction Band ◽  
Deformation Potential ◽  
Potential Constant

Spectroscopic determination of the optical deformation-potential constant in semiconductors

1991 ◽  
Vol 67 (17) ◽  
pp. 2335-2338 ◽  
Author(s):  
D. Braun ◽  
W. Rühle ◽  
C. Trallero-Giner ◽  
J. Collet
Keyword(s):  
Spectroscopic Determination ◽  
Deformation Potential ◽  
Potential Constant

Determination of the Deformation-Potential Constant of the Conduction Band of Silicon from the Piezospectroscopy of Donors

1972 ◽  
Vol 6 (6) ◽  
pp. 2348-2356 ◽  
Author(s):  
V. J. Tekippe ◽  
H. R. Chandrasekhar ◽  
P. Fisher ◽  
A. K. Ramdas
Keyword(s):  
Conduction Band ◽  
Deformation Potential ◽  
Potential Constant

The valence bandstructure and the hole mobility in silicon

1977 ◽  
Vol 55 (17) ◽  
pp. 1485-1491 ◽  
Author(s):  
H. Nakagawa ◽  
S. Zukotynski
Keyword(s):  
Experimental Data ◽  
Entire Range ◽  
Room Temperature ◽  
Hole Mobility ◽  
Deformation Potential ◽  
Coupling Constant ◽  
Phonon Coupling ◽  
Potential Constant ◽  
Constant E ◽  
Best Fit

The hole mobility in silicon is calculated as a function of temperature. The calculation takes into account both the non-parabolicity and the warping of the valence band. The effect of both light and heavy holes on the total mobility is considered. The contribution of light holes varies from 30% at low temperature to 15% at room temperature. The values of the band parameters are correlated to the temperature dependence of the mobility and the results agree very well with experimental data in the entire range from 10 to 450 K. For best fit the value of the acoustic deformation potential constant Eeff is found to be 5.2 eV and the optical phonon coupling constant DtK is found to be 7 × 108 eV/cm.

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