Thermal Effect in Surface Atmosphere of the Solar Eclipse on June 10, 2021

AbstractWe present the results of the analysis of a movie taken over a small field of view in the intermediate corona at a spatial resolution of 0.5“, a temporal resolution of 1 s and a spectral passband of 7 nm. These CCD observations were made at the prime focus of the 3.6 m aperture CFHT telescope during the 1991 total solar eclipse.

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FeXIV Line Emission Polarization of the July 11, 1991 Solar Corona

International Astronomical Union Colloquium ◽

10.1017/s0252921100026002 ◽

1994 ◽

Vol 144 ◽

pp. 541-547

Author(s):

J. Sýkora ◽

J. Rybák ◽

P. Ambrož

Keyword(s):

High Resolution ◽

Solar Corona ◽

Emission Line ◽

Solar Eclipse ◽

White Light ◽

Preliminary Analysis ◽

Line Emission ◽

Total Solar Eclipse ◽

Degree Of Polarization ◽

High Resolution Images

AbstractHigh resolution images, obtained during July 11, 1991 total solar eclipse, allowed us to estimate the degree of solar corona polarization in the light of FeXIV 530.3 nm emission line and in the white light, as well. Very preliminary analysis reveals remarkable differences in the degree of polarization for both sets of data, particularly as for level of polarization and its distribution around the Sun’s limb.

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UHV-STM studies of silicon nano-pyramid growth on silicon surface at high temperature

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100130353 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1144-1145

Author(s):

T. Sato ◽

S. Kitamura ◽

T. Sueyoshl ◽

M. Iwatukl ◽

C. Nielsen

Keyword(s):

High Temperature ◽

Relaxation Process ◽

Thermal Effect ◽

Bias Voltage ◽

Silicon Surface ◽

Growth Process ◽

Tunneling Current ◽

Fabrication Technique ◽

Nano Fabrication ◽

Electromigration Effect

Recently, the growth process and relaxation process of crystalline structures were studied by observing a SI nano-pyramid which was built on a Si surface with a UHV-STM. A UHV-STM (JEOL JSTM-4000×V) was used for studying a heated specimen, and the specimen was kept at high temperature during observation. In this study, the nano-fabrication technique utilizing the electromigration effect between the STM tip and the specimen was applied. We observed Si atoms migrated towords the tip on a high temperature Si surface.Clean surfaces of Si(lll)7×7 and Si(001)2×l were prepared In the UHV-STM at a temperature of approximately 600 °C. A Si nano-pyramid was built on the Si surface at a tunneling current of l0nA and a specimen bias voltage of approximately 0V in both polarities. During the formation of the pyramid, Images could not be observed because the tip was stopped on the sample. After the formation was completed, the pyramid Image was observed with the same tip. After Imaging was started again, the relaxation process of the pyramid started due to thermal effect.

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