EBIRCH Localization for Low-Current Soft Fails
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Abstract An experimental study was undertaken to determine the minimum level of leakage or shorting current could be detected by EBIRCH. A 22 nm SRAM array was overstressed with a series gradually increasing bias, followed by EBIRCH scans with 1 V applied bias and 2 kV SEM imaging, until fins were observed. The result was that with only 12 nA of shorting current, the fins of a pulldown device could be imaged by EBIRCH. Higher stresses created an ohmic short, and careful consideration of experiments with current direction provide additional evidence that EBIRCH is largely a temperaturedriven, or Seebeck effect.
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2021 ◽
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2020 ◽
Vol 8
(2)
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pp. 140-164
1995 ◽
Vol 53
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pp. 636-637
1990 ◽
Vol 48
(1)
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pp. 306-307
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1962 ◽
Vol 5
(4)
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pp. 387-394
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