scholarly journals Selective Dry Etch Removal of Si and SiOxNy for Advanced Electron Beam Probing Applications

2021 ◽  
Author(s):  
Mary Edmonds ◽  
Thaddeus Cox ◽  
John Markulin ◽  
Martin von Haartman
Keyword(s):  
Metal Layer ◽  
Laser Interferometry ◽  
Preparation Technique ◽  
Structural Failure ◽  
Applied Bias ◽  
Sem Image ◽  
Sample Preparation Technique ◽  
Selective Etch ◽  
Sem Imaging ◽  
Dry Etch

Abstract This paper presents a global die level sample preparation technique utilizing selective etch chemistry and laser interferometry to expose the entire die top-most metal layer surface for Ebeam electrical FI. A novel Ebeam based probing technique referred to as StaMPS is introduced alongside this prep technique to isolate logic structure failures observed through SEM image contrasts at different logic states. By landing SEM probe tips on exposed metal pads and controlling logic states via an applied bias, the varying states produce different contrast within SEM imaging highlighting structural failure locations. This global prep technique in combination with StaMPS Ebeam FI creates faster FI/FA turn-around time by delivering a globally delayered full die in under an hour and creating opportunity to locate several defect types within a single sample.

Alternative Sample Preparation Technique for Die Level Parallel Lapping Analysis

2013 ◽  
Author(s):  
Hoon Ye Gwee ◽  
Kiong Kay Ng
Keyword(s):  
Integrated Circuits ◽  
Sample Preparation ◽  
Preparation Method ◽  
Preparation Technique ◽  
Sample Preparation Method ◽  
Simple Method ◽  
Sample Preparation Technique ◽  
Sem Imaging ◽  
Voltage Contrast ◽  
Super Glue

Abstract Parallel lapping (often called delayering) is a commonly used process in failure analysis of integrated circuits. However, parallel lapping commonly gives rise to the issue of weak sample preparation method especially on specimen mounting. The traditional specimen mounting technique was done by mounted a single die to polishing fixture using drop of super glue. Using conventional methods, problems such as losing the die during polishing, serious edge rounding are often encountered. Further, loading the whole polishing fixture into Scanning Electron Microscopy machine for SEM imaging or Passive Voltage Contrast (PVC) fault localization can be complicated due to the size of polishing fixture. Therefore, an alternative, relatively fast and simple method to overcome the above mentioned obstacles is proposed.

SEM evaluation of the TEM cold-stage double-film specimen

1984 ◽  
Vol 42 ◽  
pp. 272-273
Author(s):  
Jayesh Bellare
Keyword(s):  
Spatial Distribution ◽  
Sample Preparation ◽  
Sample Thickness ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Liquid Sample ◽  
Thin Specimen ◽  
Sample Preparation Technique ◽  
Cold Stage ◽  
Film Specimen

Seeing is believing, but only after the sample preparation technique has received a systematic study and a full record is made of the treatment the sample gets.For microstructured liquids and suspensions, fast-freeze thermal fixation and cold-stage microscopy is perhaps the least artifact-laden technique. In the double-film specimen preparation technique, a layer of liquid sample is trapped between 100- and 400-mesh polymer (polyimide, PI) coated grids. Blotting against filter paper drains excess liquid and provides a thin specimen, which is fast-frozen by plunging into liquid nitrogen. This frozen sandwich (Fig. 1) is mounted in a cooling holder and viewed in TEM.Though extremely promising for visualization of liquid microstructures, this double-film technique suffers from a) ireproducibility and nonuniformity of sample thickness, b) low yield of imageable grid squares and c) nonuniform spatial distribution of particulates, which results in fewer being imaged.

Direct structure images of 30° partial dislocation cores in silicon

1987 ◽  
Vol 45 ◽  
pp. 242-243
Author(s):  
J. C. Barry ◽  
H. Alexander
Keyword(s):  
Dislocation Core ◽  
Preparation Technique ◽  
Burgers Vector ◽  
Vector Type ◽  
Sample Preparation Technique ◽  
Lattice Images ◽  
Dislocation Core Structure ◽  
Type Lattice ◽  
Direct Inspection

Dislocations in silicon produced by plastic deformation are generally dissociated into partials. 60° dislocations (Burgers vector type 1/2[101]) are dissociated into 30°(Burgers vector type 1/6[211]) and 90°(Burgers vector type 1/6[112]) dislocations. The 30° partials may be either of “glide” or “shuffle” type. Lattice images of the 30° dislocation have been obtained with a JEM 100B, and with a JEM 200Cx. In the aforementioned experiments a reasonable but imperfect match was obtained with calculated images for the “glide” model. In the present experiment direct structure images of 30° dislocation cores have been obtained with a JEOL 4000EX. It is possible to deduce the 30° dislocation core structure by direct inspection of the images. Dislocations were produced by compression of single crystal Si (sample preparation technique described in Alexander et al.).

Introduction of a Novel Sample Preparation Technique for the Failure Analysis of Silicon Integrated Photonics Modules

2019 ◽  
Author(s):  
Pradip Sairam Pichumani ◽  
Fauzia Khatkhatay
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Silicon Photonics ◽  
Cmos Technology ◽  
Single Step ◽  
Oxide Semiconductor ◽  
Disruptive Technology ◽  
Preparation Technique ◽  
Test Vehicle ◽  
Sample Preparation Technique

Abstract Silicon photonics is a disruptive technology that aims for monolithic integration of photonic devices onto the complementary metal-oxide-semiconductor (CMOS) technology platform to enable low-cost high-volume manufacturing. Since the technology is still in the research and development phase, failure analysis plays an important role in determining the root cause of failures seen in test vehicle silicon photonics modules. The fragile nature of the test vehicle modules warrants the development of new sample preparation methods to facilitate subsequent non-destructive and destructive analysis methods. This work provides an example of a single step sample preparation technique that will reduce the turnaround time while simultaneously increasing the scope of analysis techniques.

Circuit Tracing on Integrated Circuit Using FIB Passive Voltage Contrast Effect

2015 ◽  
Author(s):  
Alexander Sorkin ◽  
Chris Pawlowicz ◽  
Alex Krechmer ◽  
Michael W. Phaneuf
Keyword(s):  
Electron Microscope ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Metal Layer ◽  
Database System ◽  
Conventional Procedure ◽  
Sem Imaging ◽  
Voltage Contrast ◽  
Scanning Electron ◽  
Graphic Database

Abstract Competitive circuit analysis of Integrated Circuits (ICs) is one of the most challenging types of analysis. It involves multiple complex IC die de-processing/de-layering steps while keeping precise planarity from metal layer to metal layer. Each step is followed by Scanning Electron Microscope (SEM) imaging together with mosaicking that subsequently passes through an image recognition and Graphic Database System (GDS) conversion process. This conventional procedure is quite time and resource consuming. The current paper discusses and demonstrates a new inventive methodology of circuit tracing on an IC using known FIB Passive Voltage Contrast (PVC) effects [1]. This technique provides significant savings in time and resources.

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