scholarly journals THE DISTRIBUTION FUNCTION OF FAST ELECTRONS DURING THEIR PROPAGATION IN THE FLARE PLASMA WITH THE DEVELOPMENT OF BEAM INSTABILITY

2018 ◽  
Author(s):  
I.V. Kudryavtsev ◽  
◽  
T.I. Kaltman ◽  
P.V. Vatagin ◽  
Yu.E. Charikov ◽  
...  
Keyword(s):  
Distribution Function ◽  
Beam Instability ◽  
Fast Electrons ◽  
Flare Plasma

scholarly journals Shock Drift Acceleration of Electrons

2001 ◽  
Vol 18 (4) ◽  
pp. 361-373 ◽  
Author(s):  
Lewis Ball ◽  
D. B. Melrose
Keyword(s):  
Distribution Function ◽  
Electric Field ◽  
Power Law ◽  
Shock Reflection ◽  
Beam Instability ◽  
The Cross ◽  
Power Law Distributions

AbstractWe review the theory of shock drift acceleration, developing the theory in detail for gyrophaseaveraged particles. It is shown howboth the upstream and downstream velocity spaces separate into different regions according to the interaction of the particles with the shock (reflection, transmission, head-on, overtaking). The effects of the cross-shock electric field and of the magnetic overshoot are discussed. The effectiveness of acceleration is estimated for Maxwellian and power law distributions. The condition for a beam instability to be generated by reflected particles is determined and found to be independent of the distribution function for isotropic inflowing electrons.

Dynamics of Fast Electrons in an Inhomogeneous Plasma with Plasma Beam Instability

2019 ◽  
Vol 59 (7) ◽  
pp. 838-842
Author(s):  
I. V. Kudryavtsev ◽  
T. I. Kaltman ◽  
P. V. Vatagin ◽  
Yu. E. Charikov
Keyword(s):  
Inhomogeneous Plasma ◽  
Beam Instability ◽  
Fast Electrons ◽  
Plasma Beam

Design of Sensitive Photographic Materials for the High-Voltage Electron Microscope

1975 ◽  
Vol 33 ◽  
pp. 156-157
Author(s):  
Murray Vernon King ◽  
Donald F. Parsons
Keyword(s):  
Electron Microscope ◽  
Radiation Damage ◽  
High Voltage ◽  
Radiation Sensitivity ◽  
Fast Electrons ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron ◽  
Biological Studies ◽  
Low Sensitivity

Effective application of the high-voltage electron microscope to a wide variety of biological studies has been restricted by the radiation sensitivity of biological systems. The problem of radiation damage has been recognized as a serious factor influencing the amount of information attainable from biological specimens in electron microscopy at conventional voltages around 100 kV. The problem proves to be even more severe at higher voltages around 1 MV. In this range, the problem is the relatively low sensitivity of the existing recording media, which entails inordinately long exposures that give rise to severe radiation damage. This low sensitivity arises from the small linear energy transfer for fast electrons. Few developable grains are created in the emulsion per electron, while most of the energy of the electrons is wasted in the film base.

High-angle electron scattering from amorphous silicon

1995 ◽  
Vol 53 ◽  
pp. 162-163
Author(s):  
M. Libera ◽  
J.A. Ott ◽  
K. Siangchaew ◽  
L. Tsung
Keyword(s):  
Electron Scattering ◽  
Amorphous Material ◽  
Structural Defects ◽  
Constant Thickness ◽  
High Angle ◽  
Fast Electrons ◽  
Angle Scattering ◽  
Stem Image ◽  
Amorphous Si ◽  
Thermal Vibrations

Channeling occurs when fast electrons follow atomic strings in a crystal where there is a minimum in the potential energy (1). Channeling has a strong effect on high-angle scattering. Deviations in atomic position along a channel due to structural defects or thermal vibrations increase the probability of scattering (2-5). Since there are no extended channels in an amorphous material the question arises: for a given material with constant thickness, will the high-angle scattering be higher from a crystal or a glass?Figure la shows a HAADF STEM image collected using a Philips CM20 FEG TEM/STEM with inner and outer collection angles of 35mrad and lOOmrad. The specimen (6) was a cross section of singlecrystal Si containing: amorphous Si (region A), defective Si containing many stacking faults (B), two coherent Ge layers (CI; C2), and a contamination layer (D). CBED patterns (fig. lb), PEELS spectra, and HAADF signals (fig. lc) were collected at 106K and 300K along the indicated line.

Sign in / Sign up

Export Citation Format

Share Document