scholarly journals Pulsed laser scan methodology for single event effect (SEE) qualification

2019 ◽  
Author(s):  
Chung Tah Chua
Author(s):  
Samuel Chef ◽  
Chung Tah Chua ◽  
Yu Wen Siah ◽  
Philippe Perdu ◽  
Chee Lip Gan ◽  
...  

Abstract Today’s VLSI devices are neither designed nor manufactured for space applications in which single event effects (SEE) issues are common. In addition, very little information about the internal schematic and usually nothing about the layout or netlist is available. Thus, they are practically black boxes for satellite manufacturers. On the other hand, such devices are crucial in driving the performance of spacecraft, especially smaller satellites. The only way to efficiently manage SEE in VLSI devices is to localize sensitive areas of the die, analyze the regions of interest, study potential mitigation techniques, and evaluate their efficiency. For the first time, all these activities can be performed using the same tool with a single test setup that enables a very efficient iterative process that reduce the evaluation time from months to days. In this paper, we will present the integration of a pulsed laser for SEE study into a laser probing, laser stimulation, and emission microscope system. Use of this system will be demonstrated on a commercial 8 bit microcontroller.


1994 ◽  
Vol 41 (6) ◽  
pp. 2195-2202 ◽  
Author(s):  
S. Buchner ◽  
J.B. Langworthy ◽  
W.J. Stapor ◽  
A.B. Campbell ◽  
S. Rivet

2018 ◽  
Vol 59 ◽  
pp. 46-56 ◽  
Author(s):  
Robért Glein ◽  
Florian Rittner ◽  
Albert Heuberger

Picosecond Pulsed Laser System (PPLS) was used to simulate the single event effects (SEE) on satellite electronic components. Single event transients effect induced in an operational amplifier (LM324) to determine how transient amplitude and charge collection varied with pulsed laser energies. The wavelength and the focused spot size are the primary factors generating the resultant charge density profile. The degradation performance of LM324 induced by pulsed laser irradiation with two wavelength (1064nm, 532nm) is determined as a function of laser cross section. The transient voltage changed due to pulsed laser hitting specific transistors. This research shows the sensitivity mapping of LM324 under the effect of fundamental and second harmonic wavelengths. Determine the threshold energy of the SET in both wavelength, and compare the laser cross section of 1064 nm beam and 532 nm beam.


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