scholarly journals Low Noise Multiquantum Well DAR IMPATT Diodes Based On SiXGe1-X/Si

2020 ◽  
Vol 6 (2) ◽  
pp. 29-35
Author(s):  
Suranjana Banerjee
Keyword(s):  
Low Noise ◽  
Multiquantum Well ◽  
Impatt Diodes

scholarly journals Modeling, Design, and Fabrication of Self-Doping Si1−xGex/Si Multiquantum Well Material for Infrared Sensing

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Bo Jiang ◽  
Dandan Gu ◽  
Yulong Zhang ◽  
Yan Su ◽  
Yong He ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Chemical Vapor ◽  
Sige Layer ◽  
Resistance Coefficient ◽  
Low Noise ◽  
Reduced Pressure ◽  
Infrared Sensing ◽  
Pressure Chemical ◽  
Temperature Resistance Coefficient ◽  
Multiquantum Well

The paper presents the study of band distributions and thermoelectric properties of self-doping Si1−xGex/Si multiquantum well material for infrared detection. The simulations of different structures (including boron doping, germanium concentrations, and SiGe layer thickness) have been conducted. The critical thickness of SiGe layer grown on silicon substrate has also been illustrated in the paper. The self-doping Si1−xGex/Si multiquantum well material was epitaxially grown on SOI substrate with reduced pressure chemical vapor deposition. Each layer of the material is clear in the SEM. TheI-Vcharacterizations and temperature resistance coefficient (TCR) tests were also performed to show the thermoelectric properties. The TCR was about −3.7%/K at room temperature in the experiments, which is competitive with the other thermistor materials. The material is a low noise material, whose root mean square noise is 1.89 mV in the experiments.

Low noise wide bandgap SiC based IMPATT diodes at sub-millimeter wave frequencies and at high temperature

2014 ◽  
Vol 35 (3) ◽  
pp. 034006 ◽  
Author(s):  
J. Pradhan ◽  
S. R. Pattanaik ◽  
S. K. Swain ◽  
G. N. Dash
Keyword(s):  
High Temperature ◽  
Millimeter Wave ◽  
Wide Bandgap ◽  
Low Noise ◽  
Impatt Diodes

Low noise, high efficiency GaAs IMPATT diodes at 30 GHz

1992 ◽  
Vol 28 (8) ◽  
pp. 706 ◽  
Author(s):  
M.J. Kearney ◽  
N.R. Couch ◽  
J.S. Stephens ◽  
R.S. Smith
Keyword(s):  
High Efficiency ◽  
Low Noise ◽  
Impatt Diodes

Distribution of R- and S-Process Elements in the Galactic Halo

1988 ◽  
Vol 132 ◽  
pp. 501-506
Author(s):  
C. Sneden ◽  
C. A. Pilachowski ◽  
K. K. Gilroy ◽  
J. J. Cowan
Keyword(s):  
Heavy Element ◽  
Galactic Halo ◽  
Low Noise ◽  
Heavy Elements ◽  
Process Synthesis ◽  
Element Abundances ◽  
Halo Stars ◽  
Abundance Patterns ◽  
R Process ◽  
Process Elements

Current observational results for the abundances of the very heavy elements (Z>30) in Population II halo stars are reviewed. New high resolution, low noise spectra of many of these extremely metal-poor stars reveal general consistency in their overall abundance patterns. Below Galactic metallicities of [Fe/H] Ã −2, all of the very heavy elements were manufactured almost exclusively in r-process synthesis events. However, there is considerable star-to-star scatter in the overall level of very heavy element abundances, indicating the influence of local supernovas on element production in the very early, unmixed Galactic halo. The s-process appears to contribute substantially to stellar abundances only in stars more metal-rich than [Fe/H] Ã −2.

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