scholarly journals On the limit of the accuracy of timе stamp at the detection of annihilation γ-quanta with a scintillation detector

Author(s):  
Mikhail V. Korzhik

An influence of the various relaxation processes of the electronic excitations causing the scintillation in the crystalline compounds under ionising radiation is analysed. It was found that the intracenter relaxation of electronic excitations in the luminescence ion forms a physical limit for the time resolution of the scintillation detector. The limit of the time resolution, which can be provided when measuring the ionising radiation with a scintillation detector, has been established by simulation. A comparison of the time resolution limits for various errors by the electronic part of the ionising radiation detector is performed. It is shown that inorganic scintillation materials based on single crystals activated by cerium ions have a limit of 10 ps, while self-activated scintillators with low yield and short scintillation kinetics may show results not worse than 20 ps. It has been demonstrated that a further increase in the scintillation yield while keeping the short kinetics in self-activated materials can provide a better time resolution in comparison with Ce-activated materials in future detectors.

2005 ◽  
Vol 318 (1) ◽  
pp. 113-118
Author(s):  
N. V. Sidorov ◽  
M. N. Palatnikov ◽  
V. T. Kalinnikov ◽  
I. V. Biryukova ◽  
K. Bormanis

2016 ◽  
Vol 34 (2) ◽  
pp. 297-301 ◽  
Author(s):  
Dong Jin Kim ◽  
Joon-Ho Oh ◽  
Han Soo Kim ◽  
Young Soo Kim ◽  
Manhee Jeong ◽  
...  

AbstractTlBr single crystals grown using the vertical Bridgman-Stockbarger method were characterized for semiconductor based radiation detector applications. It has been shown that the vertical Bridgman-Stockbarger method is effective to grow high-quality single crystalline ingots of TlBr. The TlBr single crystalline sample, which was located 6 cm from the tip of the ingot, exhibited lower impurity concentration, higher crystalline quality, high enough bandgap (>2.7 eV), and higher resistivity (2.5 × 1011 Ω·cm) which enables using the fabricated samples from the middle part of the TlBr ingot for fabricating high performance semiconductor radiation detectors.


1997 ◽  
Vol 23 (11) ◽  
pp. 882-885 ◽  
Author(s):  
M. A. Obolenskii ◽  
A. V. Bondarenko ◽  
R. V. Vovk ◽  
A. A. Prodan

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