Galvanomagnetic and thermomagnetic phenomena in thin metal CoPt films

2021 ◽  
Author(s):  
Yurii M. Kuznetsov ◽  
Mikhail V. Dorokhin ◽  
Anton V. Zdoroveyshchev ◽  
Aleksey V. Kudrin ◽  
Polina B. Demina ◽  
...  
Author(s):  
Yurii M. Kuznetsov ◽  
Mikhail V. Dorokhin ◽  
Anton V. Zdoroveyshchev ◽  
Aleksey V. Kudrin ◽  
Polina B. Demina ◽  
...  

Author(s):  
J. Bentley ◽  
E. A. Kenik

Instruments combining a 100 kV transmission electron microscope (TEM) with scanning transmission (STEM), secondary electron (SEM) and x-ray energy dispersive spectrometer (EDS) attachments to give analytical capabilities are becoming increasingly available and useful. Some typical applications in the field of materials science which make use of the small probe size and thin specimen geometry are the chemical analysis of small precipitates contained within a thin foil and the measurement of chemical concentration profiles near microstructural features such as grain boundaries, point defect clusters, dislocations, or precipitates. Quantitative x-ray analysis of bulk samples using EDS on a conventional SEM is reasonably well established, but much less work has been performed on thin metal foils using the higher accelerating voltages available in TEM based instruments.


Author(s):  
L. M. Gignac ◽  
K. P. Rodbell

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.


2006 ◽  
Vol 133 ◽  
pp. 511-514
Author(s):  
T. Matsuoka ◽  
A. Maksimchuk ◽  
T. Lin ◽  
O. V. Batishchev ◽  
A. A. Batishcheva ◽  
...  

1984 ◽  
Vol 45 (C2) ◽  
pp. C2-381-C2-386
Author(s):  
P. Doig ◽  
P. E.J. Flewitt
Keyword(s):  
X Ray ◽  

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