scholarly journals Ferromagnetic Properties of Diluted Magnetic Semiconductor Zn1-xCrxTe.

2003 ◽  
Vol 27 (4) ◽  
pp. 281-284 ◽  
Author(s):  
H. Saito ◽  
V. Zayets ◽  
S. Yamagata ◽  
K. Ando
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Ferromagnetic Properties ◽  
Diluted Magnetic

The impact of hydrogenation conditions on the physical properties of the degenerated Ni/Al co-doped diluted magnetic semiconductor anatase nanoparticles

2021 ◽  
Vol 11 ◽  
Author(s):  
A. A. Dakhel
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Precipitation Method ◽  
Optical Absorption Spectroscopy ◽  
X Ray Diffraction ◽  
Ferromagnetic Properties ◽  
Anatase Nanoparticles ◽  
Diluted Magnetic ◽  
The Impact ◽  
Co Doped

: Anatase (TiO2) nanoparticles co-doped with Ni/Al ions were synthesized by a thermo-precipitation method. The samples were characterized by using X‐Ray diffraction and optical absorption spectroscopy. The structural/optical investigations established the development of substitutional solid solutions: TiO2:Ni:Al. The magnetization investigations were performed to study the generated stable ferromagnetic properties of the samples due to the Ni2+ doping. To boost the created ferromagnetic properties, Al ions co-dopings were employed to supply/densify the itinerant electrons. It was planned to decide the suitable hydrogenation conditions and temperature (TH), which are necessary to create appreciable strength of ferromagnetic properties in the host co-doped samples based on TiO2 for practical uses. The results established that the ferromagnetic energy (Umag) was increased by ~240% and the saturation magnetization by ~140% with increasing of TH from 400 oC to 500oC. The obtained Msat was higher by ~50 times than that previously attained for Ni-doped TiO2. Such novel results were discussed and explained through the spin-spin Heisenberg interactions.

No ferromagnetic properties in polycrystalline Al-doped Zn0.97Mn0.03O diluted magnetic semiconductor

2010 ◽  
Vol 518 (16) ◽  
pp. 4549-4552 ◽  
Author(s):  
N. Brihi ◽  
A. Bouaine ◽  
A. Berbadj ◽  
G. Schmerber ◽  
S. Colis ◽  
...  
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Ferromagnetic Properties ◽  
Diluted Magnetic

Mn Diffusion and Reactive Diffusion in Ge: Spintronic Applications

2015 ◽  
Vol 363 ◽  
pp. 56-61
Author(s):  
Alain Portavoce ◽  
Omar Abbes ◽  
Sylvain Bertaina ◽  
Yauheni Rudzevich ◽  
Lee Chow ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Solubility Limit ◽  
Reactive Diffusion ◽  
Thermally Stable ◽  
Ferromagnetic Properties ◽  
Mn Diffusion ◽  
Diluted Magnetic

In this paper, we report investigations concerning the fabrication of a diluted Ge (Mn) solution using solid state Mn diffusion, and Mn/Ge reactive diffusion for spintronic applications. The study of Mn diffusion shows that the quasi-totality of the incorporated Mn atoms occupies Ge substitutional sites and probably exhibits two negative elementary charges. The solubility limit of Mn in Ge is comprised between 0.7 and 0.9 % (T  600 °C). We show that substitutional Mn atoms are not ferromagnetic in Ge and consequently that Ge (Mn) diluted magnetic semiconductor can not be produced. Beside the ferromagnetic signal from Mn5Ge3, ferromagnetic signals detected in the samples could be always attributed to surface or bulk Mn-Ge clusters. Furthermore, we show that the CMOS Salicide process is potentially applicable to Mn5Ge3 nanolayer fabrication on Ge for spintronic applications. During Mn (thin-film)/Ge reaction, Mn5Ge3 is the first phase to form, being thermally stable up to 310 °C and exhibiting ferromagnetic properties up to TC ~ 300 K.

Magnetic studies of PbMnI2 Layered Diluted Magnetic Semiconductor Nanoparticles

2018 ◽  
Vol 10 (5) ◽  
pp. 05005-1-05005-5
Author(s):  
I. D. Stolyarchuk ◽  
◽  
I. Rogalska ◽  
S. V. Koretskii ◽  
I. Stefaniuk ◽  
...  
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Semiconductor Nanoparticles ◽  
Magnetic Studies ◽  
Diluted Magnetic

The distinct behavior of specific heat of diluted magnetic semiconductor (Ga,Mn)As quantum wells

2015 ◽  
Vol 15 ◽  
pp. S26-S29 ◽  
Author(s):  
Hee Chang Jeon ◽  
Mingkai Li ◽  
Seung Joo Lee ◽  
Gukhyung Ihm ◽  
Tae Won Kang ◽  
...  
Keyword(s):  
Specific Heat ◽  
Quantum Wells ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Diluted Magnetic

scholarly journals Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)$$_{2}$$As$$_{2}$$

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Licheng Fu ◽  
Yilun Gu ◽  
Guoxiang Zhi ◽  
Haojie Zhang ◽  
Rufei Zhang ◽  
...  
Keyword(s):  
Unit Cell Volume ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Vital Role ◽  
Ferromagnetic Transition ◽  
Chemical Pressure ◽  
Tetragonal Crystal ◽  
Tetragonal Crystal Structure ◽  
Diluted Magnetic ◽  
Ferromagnetic Ordering

AbstractWe report the effect of chemical pressure on the ferromagnetic ordering of the recently reported n-type diluted magnetic semiconductor Ba(Zn$$_{1-x}$$ 1 - x Co$$_{x}$$ x )$$_{2}$$ 2 As$$_{2}$$ 2 which has a maximum $$T_C$$ T C $$\sim$$ ∼ 45 K. Doping Sb into As-site and Sr into Ba-site induces negative and positive chemical pressure, respectively. While conserving the tetragonal crystal structure and n-type carriers, the unit cell volume shrink by $$\sim$$ ∼ 0.3$$\%$$ % with 15$$\%$$ % Sr doping, but drastically increase the ferromagnetic transition temperature by 18$$\%$$ % to 53 K. Our experiment unequivocally demonstrate that the parameters of Zn(Co)As$$_{4}$$ 4 tetrahedra play a vital role in the formation of ferromagnetic ordering in the Ba(Zn,Co)$$_{2}$$ 2 As$$_{2}$$ 2 DMS.

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