scholarly journals Quantum Dots: An Emerging Approach for Cancer Therapy

2022 ◽  
Vol 8 ◽  
Author(s):  
Sheetal Devi ◽  
Manish Kumar ◽  
Abhishek Tiwari ◽  
Varsha Tiwari ◽  
Deepak Kaushik ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
Atomic Layer ◽  
Present Review ◽  
Layer By Layer ◽  
Ion Beam Sputtering ◽  
Photodynamic Treatment ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Fundamental Insight

Nanotechnology is indisputably a scientific technique that offers the prospect of new therapies, and hope, for the treatment of malignant illnesses. It is a novel technology that offers new approaches for the diagnosis and management of diverse diseases. Although the discovery of Quantum dots (QD) nano-transporters has already led to a few positive developments, QD nano-transporters are still at their initial stage, though have yet proven valuable to society. The excertion of QD indicates conversion in natural imaging along with photograph have established incredible suitability in bio-imaging, new drug development, targeted gene deliverance, biosensing, photodynamic treatment as well as diagnosis. The present review aimed to confer the significance of QD in diagnosis as well as in management of cancer. This review aims to impart fundamental insight as well as conception of QD its merits, properties, utilization as well as mode of action. This review highlight of different designing schemes of QD like hydrothermal, drop-casting, ultrasonic, solvothermal, spin-coating, atomic layer desorption, layer by layer, polymethylmethacrylate aided-transfer, electrochemical, ion beam sputtering deposition. Moreover, we have elaborated on the diverse researches related to cytotoxic examination to reveal that QDs are harmless. Concisely, the present review summarizes the fabrication schemes, current research and utilization of QD in cancer treatment.

Epitaxial Growth of BSCCO Type Structure in Atomic Layer by Layer Deposition by Ion Beam Sputtering

1993 ◽  
pp. 849-852
Author(s):  
Hiroyuki Ota ◽  
Shinji Migita ◽  
Hiroshi Otera ◽  
Jun-Ichi Ito ◽  
Kazuo Sakai ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Atomic Layer ◽  
Type Structure ◽  
Layer By Layer ◽  
Ion Beam Sputtering ◽  
Layer Deposition ◽  
Beam Sputtering

Effects of Si Spacer-Layer on the Structure of Ge/Si Quantum Dots Bilayers Grown by Ion Beam Sputtering

2013 ◽  
Vol 873 ◽  
pp. 479-485
Author(s):  
Xi Zhou ◽  
Chong Wang ◽  
Jie Yang ◽  
Ying Xia Jin ◽  
Yu Yang
Keyword(s):  
Quantum Dots ◽  
Double Layer ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Si Quantum Dot ◽  
Spacer Layer ◽  
Beam Sputtering ◽  
Factor Interactions ◽  
Si Quantum Dots

A series of double-layer Ge/Si quantum dots are prepared by ion beam sputtering deposition (IBSD) on Si (100) substrates. The influences of deposition temperature and thickness of Si spacer-layer on the microstructure of double-layer Ge/Si quantum dots were characterized by using Atomic force microscopy (AFM) and Raman spectra technique. The results indicate that the density of the second layer islands firstly increases and then decreases with increasing the growth temperature of Si spacer-layers. In addition, increasing the thickness of Si spacer-layer, the islands merger phenomenon disappears. When the deposition thickness is larger than 40 nm, the islands on the upper-layer show the same features with the buried islands. The mechanism of three-factor-interactions of nanoislands is proposed to explain these phenomena, and our results can be used as a guidance to obtain optimum IBSD growth process for Ge/Si quantum-dot superlattices.

scholarly journals Underlying strain-induced growth of the self-assembled Ge quantum-dots prepared by ion beam sputtering deposition

2012 ◽  
Vol 61 (1) ◽  
pp. 016804
Author(s):  
Yang Jie ◽  
Wang Chong ◽  
Jin Ying-Xia ◽  
Li Liang ◽  
Tao Dong-ping ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
The Self ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Ge Quantum Dots ◽  
Self Assembled

Direct growth of Ge quantum dots on a graphene/SiO2/Si structure using ion beam sputtering deposition

2016 ◽  
Vol 27 (30) ◽  
pp. 305601 ◽  
Author(s):  
Z Zhang ◽  
R F Wang ◽  
J Zhang ◽  
H S Li ◽  
J Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Direct Growth ◽  
Ge Quantum Dots

Study on the Surface Quality of Al2O3 Nano-Films by Ion Beam Sputtering Deposition

2011 ◽  
Vol 148-149 ◽  
pp. 54-57
Author(s):  
Xiao Ping Lin ◽  
Yun Dong ◽  
Lian Wei Yang
Keyword(s):  
Surface Quality ◽  
Ion Beam ◽  
Three Dimensional ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Atomic Force ◽  
Beam Sputtering ◽  
Dimensional Growth ◽  
Different Thickness

The Al2O3 nano-films of different thicknesses (1~100nm) were successfully deposited on the monocrystalline Si surface by using ion beam sputtering deposition. The surface topography and the component of nano-films with different thickness were analyzed. The quality of the surface of nano-films was systematically studied. When the films’ thickness increase, the studies by atomic force microscope (AFM), X-ray photoelectron spectrum（XPS） show that the gathering grain continually grows up and transits from acerose cellula by two-dimensional growth to globularity by three-dimensional growth. The elements O, Al and Si were found on the surface of Al2O3 nano-films. With the thickness of the films increasing, the content of Al gradually increases and the intensity peak of Si wears off, the surface quality of the deposited films is ceaselessly improved

Formation of the crystalline β-C3N4 phase by dual ion beam sputtering deposition

2007 ◽  
Vol 61 (14-15) ◽  
pp. 2855-2858 ◽  
Author(s):  
J.P. Rivière ◽  
D. Texier ◽  
J. Delafond ◽  
M. Jaouen ◽  
E.L. Mathé ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering
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