Growth of Single-Crystal Cd0.9Zn0.1Te Ingots Using Pressure Controlled Bridgman Method

We report growth of single-crystal Cd0.9Zn0.1Te ingots while using the pressure-controlled Bridgman method. The Cd pressure was controlled during growth to suppress its evaporation from the melt and reduce the size of Te inclusions in the as-grown crystals. The accelerated crucible rotation technique (ACRT) was used to suppress constitutional supercooling. The fast accelerating and slow decelerating rotation speeds were optimized. Two-inch Cd0.9Zn0.1Te single-crystal ingots without grain boundaries or twins were grown reproducibly. Glow discharge mass spectrometry results indicate the effective segregation coefficients of Zn and In dopants are 1.24 and 0.18, respectively. The full width half maximum (FWHM) of X-ray rocking curve was approximately 22.5 ″, and the IR transmittance was approximately 61%, indicating high crystallinity. The mean size of the Te inclusions was approximately 13.4 μm. Single-crystal wafers were cut into 5 × 5 × 2 mm3 slices and then used to fabricate gamma ray detectors. The energy resolution and peak-to-valley ratio maps were constructed while using 59.5 keV gamma ray measurements, which proved the high uniformity of detection performance.

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Numerical analysis of Cd1−xZnxTe crystal growth by the vertical Bridgman method using the accelerated crucible rotation technique

Journal of Crystal Growth ◽

10.1016/s0022-0248(00)00601-1 ◽

2000 ◽

Vol 219 (1-2) ◽

pp. 22-31 ◽

Cited By ~ 21

Author(s):

Liu Xiaohua ◽

Jie Wanqi ◽

Zhou Yaohe

Keyword(s):

Crystal Growth ◽

Numerical Analysis ◽

Bridgman Method ◽

Vertical Bridgman Method ◽

Vertical Bridgman ◽

Rotation Technique ◽

Crucible Rotation

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Crystal growth of CuInSe2 by the Bridgman method

Canadian Journal of Physics ◽

10.1139/p89-051 ◽

1989 ◽

Vol 67 (4) ◽

pp. 294-297 ◽

Cited By ~ 15

Author(s):

W. S. Weng ◽

L. S. Yip ◽

I. Shih ◽

C. H. Champness

Keyword(s):

Crystal Growth ◽

Room Temperature ◽

Amorphous Layer ◽

Bridgman Method ◽

X Ray Diffraction ◽

X Ray ◽

Vertical Bridgman ◽

Hall Effect Measurements ◽

Rotation Technique ◽

Crucible Rotation

Single crystals of CuInSe2 have been fabricated by the vertical Bridgman method. A conventional Czochralski crystal-pulling system was adapted for this purpose. An accelerated crucible-rotation technique was employed for a better mixing of the melt during the growth. Void- and crack-free crystal grains with an area as large as 50 mm2 and a thickness of more than 5 mm could be selectively cut from the ingots. From room-temperature Hall-effect measurements, mobility values as large as 73 cm2 ∙ V−1 ∙ s−1 were obtained for the present samples. X-ray diffraction studies suggested that abrasive polishing might create an amorphous layer on the surface of the CuInSe2 crystals.

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Accelerated crucible rotation technique: Bridgman growth of Li2B4O7 single crystal and simulation of the flows in the crucible

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90108-9 ◽

1993 ◽

Vol 133 (1-2) ◽

pp. 95-100 ◽

Cited By ~ 17

Author(s):

Yi-Bin Xu ◽

Shi-Ji Fan

Keyword(s):

Single Crystal ◽

Bridgman Growth ◽

Rotation Technique ◽

Crucible Rotation

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Microstructure and Electrical Characterization of In-Doped Cd0.9Mn0.1Te Crystal Grown by the Vertical Bridgman Method

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.295-298.322 ◽

2013 ◽

Vol 295-298 ◽

pp. 322-325

Author(s):

Zhen Wen Yuan ◽

Lin Jun Wang ◽

Ji Jun Zhang ◽

Gao Li Wei ◽

Kai Feng Qin ◽

...

Keyword(s):

Gamma Ray ◽

Electrical Characterization ◽

Compositional Analysis ◽

Bridgman Method ◽

X Ray ◽

Vertical Bridgman Method ◽

Ir Transmission ◽

Te Inclusions ◽

Vertical Bridgman

CdMnTe is one of the key materials for room temperature X-ray and gamma-ray detectors on Environmental Analysis and Monitoring. In this paper, the homogeneous Cd1-xMnxTe (x = 0.1) single crystal ingot was grown by the vertical Bridgman method. The compositional analysis was carried out by SEM/EDS. The Te inclusions were revealed by the IR transmission spectra. In dopant distribution was determined by ICP-AES measurement. The resistivity of CdMnTe was cha-racterized by I-V method. It was found that the segregation coefficient of Mn was 0.97. In dopant contents within 3 to 21 ppm of the ingot were found. The Te inclusions were mainly 8.2-28.3m in size and 1×105-1.5×107cm-3in concentration. I–V measurement reveals that sputtered Au film can form good ohmic contact and all the slices have the resistivity within 107 to 109Ωcm.

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Growth of a bulk-size single crystal of sulphamic acid by an in-house developed seed rotation solution growth technique and its characterization

Journal of Applied Crystallography ◽

10.1107/s1600576717004241 ◽

2017 ◽

Vol 50 (3) ◽

pp. 763-768 ◽

Cited By ~ 4

Author(s):

Sonia ◽

N. Vijayan ◽

Medha Bhushan ◽

Kanika Thukral ◽

Rishabh Raj ◽

...

Keyword(s):

Single Crystal ◽

Wavelength Region ◽

Damage Threshold ◽

Thermal Parameter ◽

X Ray Diffraction ◽

Growth Technique ◽

Rocking Curve ◽

X Ray ◽

Rotation Technique ◽

Sulphamic Acid

A bulk sulphamic acid single crystal has been grown by a modified seed rotation technique. The lattice dimensions of the grown single crystal were confirmed using powder X-ray diffraction, and it was found that it crystallized in an orthorhombic structure with space groupPbca. The strain in the lattice was calculated by the Williamson–Hall equation. The crystalline perfection was examined by high-resolution X-ray diffraction and found to be extremely good (the single peak of the rocking curve having an FWHM of ∼8.0′′). The luminescence behaviour was recorded in the wavelength region between 400 and 630 nm using an Xe flash lamp which acts as an excitation source. The shock damage threshold was measured for the grown crystal in order to determine the mechanical capability of the title compound. The thermal parameter of sulphamic acid was calculated by photoacoustic spectroscopy.

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Study on In-Doped CdMgTe Crystals Grown by a Modified Vertical Bridgman Method Using the ACRT Technique

Materials ◽

10.3390/ma12244236 ◽

2019 ◽

Vol 12 (24) ◽

pp. 4236 ◽

Cited By ~ 1

Author(s):

Pengfei Yu ◽

Biru Jiang ◽

Yongren Chen ◽

Jiahong Zheng ◽

Lijun Luan

Keyword(s):

Room Temperature ◽

Gamma Ray ◽

Radiation Detectors ◽

Bridgman Method ◽

Second Phase ◽

Zinc Blende ◽

Te Inclusions ◽

Vertical Bridgman ◽

Temperature Radiation ◽

Zinc Blende Structure

Cadmium–magnesium–telluride (CdMgTe) crystal was regarded as a potential semiconductor material. In this paper, an indium-doped Cd0.95Mg0.05Te ingot with 30 mm diameter and 120 mm length grown by a modified Bridgman method with excess Te condition was developed for room temperature gamma-ray detection. Characterizations revealed that the as-grown Cd0.95Mg0.05Te crystals had a cubic zinc-blende structure and additionally Te-rich second phase existed in the crystals. From the tip to tail of the ingot, the density of Te inclusions was about 103–105 cm−2. The crystals had a suitable band-gap range from 1.52–1.54 eV. Both infrared (IR) transmittance and resistivity were relatively low. Photoluminescence measurement indicated that the ingot had more defects. Fortunately, after annealing, IR transmittance and the resistivity were significantly enhanced due to the elimination of Te inclusions. CdMgTe crystal after annealing showed a good crystal quality. The energy resolutions of the detector for 241Am and 137Cs gamma-ray were 12.7% and 8.6%, respectively. The mobility-lifetime product for electron was 1.66 × 10−3 cm2/V. Thus, this material could be used for room temperature radiation detectors.

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