Broadband Transition from Rectangular Waveguide to Groove Gap Waveguide for mm-Wave Contactless Connections

In this paper, the authors present a broadband transition from the standard WR-10 rectangular waveguide (RW) to a groove gap waveguide (GGW) in the W-band. The transition structure is based on electromagnetic band gap (EBG) technology where two EBG units are used, which are responsible for the transition and forming the transmission line. Metal pins in the E-plane together with the back surface of the transmission line create a forbidden band, which prevents power leakage between the connecting parts. Small air gaps will not harm the transition performance according to the simulation, which means it has a better tolerance of manufacturing and assembly errors and, thus, has advantages for mm-wave contactless connections. A back-to-back transition prototype was designed, fabricated and measured. The length of the GGW is 39.6 mm. The measured |S11| is better than −13 dB and the measured |S21| is better than −0.6 dB over 76.4–109.1 GHz, covering a bandwidth of 35.3%.

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Broadband Transition between Substrate Integrated Waveguide (SIW) and Rectangular Waveguide for Millimeter-Wave Applications

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.130-134.1990 ◽

2011 ◽

Vol 130-134 ◽

pp. 1990-1993 ◽

Cited By ~ 1

Author(s):

Kuang Da Wang ◽

Wei Hong ◽

Ke Wu

Keyword(s):

Millimeter Wave ◽

Rectangular Waveguide ◽

Return Loss ◽

Substrate Integrated Waveguide ◽

Full Wave ◽

Vertical Transition ◽

W Band ◽

Relative Bandwidth ◽

Is Design ◽

Better Than

In this paper, a broadband and simple vertical transition between substrate integrated waveguide and standard air-filled rectangular waveguide is design and experimentally verified. From full-wave simulation of the structure, a relative bandwidth of 19.5% in W-band with return loss better than 20dB is reached. Then, five copies of back-to-back connected transitions are fabricated on RT/Duroid 5880 substrate. The experimental results show that the transition pairs have an average of 15% relative bandwidth with return loss better than 12dB and insert loss lower than 1.2dB. To explain the differences between simulated and tested results, an error analysis is presented.

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Analysis of mushroom-like electromagnetic band gap structure using suspended transmission line technique

2011 IEEE International RF & Microwave Conference ◽

10.1109/rfm.2011.6168743 ◽

2011 ◽

Cited By ~ 4

Author(s):

Osman Ayop ◽

Mohamad Kamal A Rahim

Keyword(s):

Transmission Line ◽

Band Gap ◽

Electromagnetic Band Gap ◽

Band Gap Structure ◽

Gap Structure

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Design of a novel microwave diplexer using slit-top mushroom-like units electromagnetic band gap structure and transmission line layer

The 8th Electrical Engineering/ Electronics, Computer, Telecommunications and Information Technology (ECTI) Association of Thailand - Conference 2011 ◽

10.1109/ecticon.2011.5947820 ◽

2011 ◽

Cited By ~ 1

Author(s):

A. Yatongchai ◽

R. Wongsan ◽

M. Krairiksh

Keyword(s):

Transmission Line ◽

Band Gap ◽

Line Layer ◽

Electromagnetic Band Gap ◽

Band Gap Structure ◽

Gap Structure

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Transmission line analysis of electromagnetic band gap (EBG) structures

2014 IEEE Antennas and Propagation Society International Symposium (APSURSI) ◽

10.1109/aps.2014.6905104 ◽

2014 ◽

Cited By ~ 1

Author(s):

Sandeep Palreddy ◽

Amir I. Zaghloul

Keyword(s):

Transmission Line ◽

Band Gap ◽

Electromagnetic Band Gap ◽

Line Analysis

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A new optical temperature measurement technique for semiconductor substrates in molecular beam epitaxy

Canadian Journal of Physics ◽

10.1139/p91-068 ◽

1991 ◽

Vol 69 (3-4) ◽

pp. 422-426 ◽

Cited By ~ 34

Author(s):

M. K. Weilmeier ◽

K. M. Colbow ◽

T. Tiedje ◽

T. Van Buuren ◽

Li Xu

Keyword(s):

Molecular Beam Epitaxy ◽

Temperature Measurement ◽

Band Gap ◽

Measurement Technique ◽

Molecular Beam ◽

Back Surface ◽

Gaas Substrates ◽

Diffuse Reflectivity ◽

Temperature Measurement Technique ◽

Better Than

A new optical temperature measurement technique for use in molecular beam epitaxy is demonstrated with GaAs substrates. The temperature of the semiconductor is inferred from its band gap, which is measured by the diffuse reflectivity of the substrate that is textured on the back surface. The method has a sensitivity of better than 2 °C, and an absolute accuracy limited by the accuracy with which the band gap is known as a function of temperature. It was found to be necessary to calibrate the measurement technique with a thermocouple in contact with the sample in order to achieve satisfactory accuracy at high temperatures. Measurements of the optical absorption edge of GaAs, show that the slope of the Urbach edge is independent of temperature from room temperature to 450 °C.

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MINIATURIZED AND HARMONIC-SUPPRESSED RF WILKINSON POWER DIVIDER WITH IB-CMRC

Modern Physics Letters B ◽

10.1142/s0217984909018898 ◽

2009 ◽

Vol 23 (05) ◽

pp. 681-688 ◽

Cited By ~ 1

Author(s):

FEI ZHANG

Keyword(s):

Transmission Line ◽

Band Gap ◽

Microwave Circuits ◽

High Order ◽

Power Divider ◽

Great Promise ◽

Electromagnetic Band Gap ◽

Harmonic Rejection ◽

Quarter Wave ◽

Wilkinson Power Divider

In this paper, the technique served by a microstrip electromagnetic band gap cell entitled IBCMRC is employed to suppress the high-order harmonics and reduce the length by over 30% for a quarter-wave conventional transmission line. The successful application of IB-CMRC cell in a 2 GHz Wilkinson power divider shows that the second and third harmonics are successfully suppressed without downgrading the performance at the operating frequency. The whole size of the proposed IBCMRC-based divider has been reduced by 42% compared to the conventional divider. In miniaturization and harmonic rejection of microwave circuits, the proposed IBCMRC technique holds great promise.

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