scholarly journals Effective Simulations of Electronic Transport in 2D Structures Based on Semiconductor Superlattice Infinite Model

Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1845
Author(s):  
Mariusz Mączka
Keyword(s):  
Electronic Transport ◽  
Type I ◽  
Transport Parameters ◽  
Semiconductor Superlattices ◽  
Accurate Analysis ◽  
Semiconductor Superlattice ◽  
Quantum Phenomena ◽  
The Green Function ◽  
Infinite Model ◽  
Method Approach

Effective simulations of semiconductor superlattices are presented in the paper. The simulations have been based on the Wannier function method approach where a new algorithm, inspired by Büttiker probes, has been incorporated into determining the Green function procedure. The program is of a modular structure, and its modules can either work independently, or interact with each other following a predefined algorithm. Such structuring not only accelerates simulations and makes the transport parameters possible to initially assess, but also enables accurate analysis of quantum phenomena occurring in semiconductor superlattices. In this paper, the capabilities of type I superlattice simulator, developed earlier, are presented, with particular emphasis on the new block where the Fermi levels are determined by applying Büttiker probes. The algorithms and methods used in the program are briefly described in the further chapters of our work, where we also provide graphics illustrating the results obtained for the simulated structures known from the literature.

CONFINEMENT OF STATES ABOVE POTENTIAL BARRIERS IN SEMICONDUCTOR SUPERLATTICES

1993 ◽  
Vol 07 (05) ◽  
pp. 299-305 ◽  
Author(s):  
H. LUO ◽  
J. K. FURDYNA
Keyword(s):  
Confinement Effects ◽  
Constructive Interference ◽  
Semiconductor Superlattices ◽  
Electron States ◽  
Potential Barriers ◽  
Semiconductor Superlattice

We discuss the localization of states whose energy exceeds potential barriers in a semiconductor superlattice. Although there are no confining potentials for such states, the potential discontinuities reflect the electron waves in such a way as to impose constructive interference conditions on the electron states, leading to significant confinement effects.

Accurate determination of electronic transport parameters in multi-carrier and multi-layer HgCdTe structures

2010 ◽  
Author(s):  
G. A. Umana-Membreno ◽  
J. Antoszewski ◽  
E.P.G. Smith ◽  
G.M. Venzor ◽  
V. Phillips ◽  
...  
Keyword(s):  
Electronic Transport ◽  
Accurate Determination ◽  
Transport Parameters

Mixed Ionic-Electronic Conduction in Pyrochlore Oxides

1990 ◽  
Vol 210 ◽  
Author(s):  
M. Spears ◽  
S. Kramer ◽  
P.K. Moon ◽  
H.L. Tuller
Keyword(s):  
Electronic Transport ◽  
Ionic Conduction ◽  
Structural Disorder ◽  
Electronic Conduction ◽  
Transport Parameters ◽  
Oxygen Ion Conductivity ◽  
Chemical Models ◽  
Oxygen Ion ◽  
Electrochemical Devices ◽  
Low X

AbstractThe transport properties of the pyrochlore solid solution Gd2(ZrxTil-x)2O7 are investigated to clarify the relationships between composition, structural disorder and ionic and electronic transport. The oxygen ion conductivity has been found to increase sharply with increasing Zr content, x, due to enhanced structural disorder, leading to intrinsic ionic conduction at large values ofx. In contrast, the n—type conductivity predominant at low x, decreases sharply above x=0.2. Defect chemical models are presented to account for the simultaneous contributions of both intrinsic and dopant induced disorder. These models are applied to the σ(T, PO2, dopant) data to extract key thermodynamic and transport parameters. The significance of these parameters and the potential application of these materials in electrochemical devices are discussed.

scholarly journals DYNAMIC LOCALIZATION AND ELECTROMAGNETIC TRANSPARENCY OF SEMICONDUCTOR SUPERLATTICE IN MULTIFREQUENCY ELECTRIC FIELDS

2007 ◽  
Vol 06 (05) ◽  
pp. 395-398
Author(s):  
J. Y. ROMANOVA ◽  
Y. A. ROMANOV
Keyword(s):  
Electric Fields ◽  
Stable States ◽  
Semiconductor Superlattices ◽  
Dynamic Localization ◽  
Semiconductor Superlattice ◽  
Electromagnetic Transparency

We consider the dynamics of electrons in semiconductor superlattices in intense multifrequency electric fields. We examine the conditions for dynamic localization and electromagnetic transparency. We investigate processes of formation, destruction, and stabilization of electromagnetic transparency in biharmonic field. The stable states with static fields are determined.

NONLINEAR ELECTRONIC TRANSPORT IN SEMICONDUCTOR SUPERLATTICES

2007 ◽  
Author(s):  
L. L. BONILLA ◽  
L. BARLETTI ◽  
R. ESCOBEDO ◽  
M. ALVARO
Keyword(s):  
Electronic Transport ◽  
Semiconductor Superlattices

Observation of Γ-X resonances in type-I GaAs/AlAs semiconductor superlattices: Anomaly in photoluminescence

1997 ◽  
Vol 55 (20) ◽  
pp. 13689-13696 ◽  
Author(s):  
M. Hosoda ◽  
H. Mimura ◽  
N. Ohtani ◽  
K. Tominaga ◽  
K. Fujita ◽  
...  
Keyword(s):  
Type I ◽  
Semiconductor Superlattices

Measurement accuracy analysis of photocarrier radiometric determination of electronic transport parameters of silicon wafers

2005 ◽  
Vol 97 (2) ◽  
pp. 023701 ◽  
Author(s):  
Bincheng Li ◽  
Derrick Shaughnessy ◽  
Andreas Mandelis
Keyword(s):  
Electronic Transport ◽  
Measurement Accuracy ◽  
Silicon Wafers ◽  
Accuracy Analysis ◽  
Transport Parameters ◽  
Radiometric Determination

scholarly journals Dynamics of electronic transport in a semiconductor superlattice with a shunting side layer

2009 ◽  
Vol 79 (24) ◽  
Author(s):  
Huidong Xu ◽  
Andreas Amann ◽  
Eckehard Schöll ◽  
Stephen W. Teitsworth
Keyword(s):  
Electronic Transport ◽  
Semiconductor Superlattice

Extraction of electronic transport parameters in submicrometer gate-length MODFET's

1991 ◽  
Vol 38 (8) ◽  
pp. 1719-1729 ◽  
Author(s):  
S.-T. Fu ◽  
M.B. Das
Keyword(s):  
Electronic Transport ◽  
Gate Length ◽  
Transport Parameters
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