scholarly journals Rapid Processing of Wafer-Scale Anti-Reflecting 3D Hierarchical Structures on Silicon and Its Templation

Materials ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 2586 ◽  
Author(s):  
Harsimran Singh Bindra ◽  
Jaikrishna R. ◽  
Tushar Kumeria ◽  
Ranu Nayak

Hierarchically structured silicon (Si) surfaces with a combination of micro/nano-structures are highly explored for their unique surface and optical properties. In this context, we propose a rapid and facile electroless method to realize hierarchical structures on an entire Si wafer of 3″ diameter. The overall process takes only 65 s to complete, unlike any conventional wet chemical approach that often combines a wet anisotropic etching of (100) Si followed by a metal nanoparticle catalyst etching. Hierarchical surface texturing on Si demonstrates a broadband highly reduced reflectance with average R% ~ 2.7% within 300–1400 nm wavelength. The as-fabricated hierarchical structured Si was also templated on a thin transparent layer of Polydimethylsiloxane (PDMS) that further demonstrated prospects for improved solar encapsulation with high optical clarity and low reflectance (90% and 2.8%).

Author(s):  
Naoya Watanabe ◽  
Takumi Miyazaki ◽  
Kazuhiro Yoshikawa ◽  
Masahiro Aoyagi

2014 ◽  
Vol 219 ◽  
pp. 40-43
Author(s):  
M. Fryda ◽  
Th. Mathée ◽  
John Oshinowo ◽  
D.H. Baek ◽  
H. J. Förster ◽  
...  

The definition of sub-20 nm electronic devices for the newest generation of smart phones, computer and automotive is calling for very innovative FEOL wet chemical cleans. The electronic properties are very sensitive, in respect of the surface morphology on a Si-wafer. Most of the modern wet cleans are based on the RCA-clean [1]. Innovative cleans, like for example the IMEC-clean [2] and modified RCA clean were developed, using ozone-DIW mixture (O3-DIW), in order to improve the cleaning performance [3], [4]. Since several years electrolyzed water (EW) is used in semiconductor manufacturing [5]. An electrochemical reaction is induced by an electrode and a small amount of ammonia hydroxide (NH4OH) or ammonia sulfate and DIW [7].


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