Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature
Keyword(s):
Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (μsat) of 7.9 cm2/V·s, an Ion/Ioff ratio of 4.58 × 106, a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications.
2017 ◽
Vol 38
(5)
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pp. 592-595
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Enhanced Negative Bias Stress Degradation in Multigate Polycrystalline Silicon Thin-Film Transistors
2017 ◽
Vol 64
(10)
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pp. 4363-4367
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Keyword(s):
2015 ◽
Vol 55
(9-10)
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pp. 1811-1814
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2014 ◽
Vol 6
(5)
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pp. 3371-3377
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Keyword(s):
2013 ◽
Vol 2
(7)
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pp. Q99-Q103
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Keyword(s):
2014 ◽
Vol 35
(3)
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pp. 396-398
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2019 ◽
Vol 11
(43)
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pp. 40196-40203
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