scholarly journals Structural Phase Transition and Metallization of Nanocrystalline Rutile Investigated by High-Pressure Raman Spectroscopy and Electrical Conductivity

Minerals ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 441 ◽  
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Heping Li ◽  
Haiying Hu ◽  
Kaixiang Liu ◽  
...  

We investigate the structural, vibrational, and electrical transport properties of nanocrystalline rutile and its high-pressure polymorphs by Raman spectroscopy, and AC complex impedance spectroscopy in conjunction with the high-resolution transmission electron microscopy (HRTEM) up to ~25.0 GPa using the diamond anvil cell (DAC). Experimental results indicate that the structural phase transition and metallization for nanocrystalline rutile occurred with increasing pressure up to ~12.3 and ~14.5 GPa, respectively. The structural phase transition of sample at ~12.3 GPa is confirmed as a baddeleyite phase, which is verified by six new Raman characteristic peaks. The metallization of the baddeleyite phase is manifested by the temperature-dependent electrical conductivity measurements at ~14.5 GPa. However, upon decompression, the structural phase transition from the metallic baddeleyite to columbite phases at ~7.2 GPa is characterized by the inflexion point of the pressure coefficient and the pressure-dependent electrical conductivity. The recovered columbite phase is always retained to the atmospheric condition, which belongs to an irreversible phase transformation.

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 746
Author(s):  
Meiling Hong ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Xinyu Zhang

A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.


Author(s):  
Linfei Yang ◽  
Jianjun Jiang ◽  
Lidong Dai ◽  
Haiying Hu ◽  
Meiling Hong ◽  
...  

The vibrational, electrical and structural properties of Ga2S3 were explored by Raman spectroscopy, EC measurements, HRTEM and First-principles theoretical calculations under different pressure environments up to 36.4 GPa.


Materials ◽  
2019 ◽  
Vol 12 (5) ◽  
pp. 784 ◽  
Author(s):  
Kaixiang Liu ◽  
Lidong Dai ◽  
Heping Li ◽  
Haiying Hu ◽  
Linfei Yang ◽  
...  

The structural, vibrational, and electronic characteristics in orpiment were performed in the diamond anvil cell (DAC), combined with a series of experimental and theoretical research, including Raman spectroscopy, impedance spectroscopy, atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), and first-principles theoretical calculations. The isostructural phase transition at ~25.0 GPa was manifested as noticeable changes in the compressibility, bond lengths, and slope of the conductivity, as well as in a continuous change in the pressure dependence of the unit cell volume. Furthermore, a pressure-induced metallization occurred at ~42.0 GPa, accompanied by reversible electrical conductivity. We also determined the metallicity of orpiment at 45.0 GPa by first-principles theoretical calculations, and the results were in good agreement with the results of the temperature-dependent conductivity measurements. The HRTEM and AFM images of the recovered sample confirmed that orpiment remains in the crystalline phase with an intact layered structure and available crystal-shaped clusters. These high-pressure behaviors of orpiment present some crucial information on the structural phase transition, metallization, amorphization and superconductivity for the A2B3-type of engineering materials at high pressure.


2015 ◽  
Vol 57 (11) ◽  
pp. 2286-2289 ◽  
Author(s):  
A. S. Oreshonkov ◽  
A. K. Khodzhibaev ◽  
A. S. Krylov ◽  
M. F. Umarov ◽  
A. N. Vtyurin

2020 ◽  
Vol 45 (58) ◽  
pp. 33047-33058
Author(s):  
Lan-Ting Shi ◽  
Cui-E Hu ◽  
Alfonso Muñoz ◽  
Lin-Xiang Ji ◽  
Yao-Yao Huang ◽  
...  

2015 ◽  
Vol 91 (10) ◽  
Author(s):  
J. Ruiz-Fuertes ◽  
A. Friedrich ◽  
O. Gomis ◽  
D. Errandonea ◽  
W. Morgenroth ◽  
...  

2009 ◽  
Vol 29 (2) ◽  
pp. 245-249 ◽  
Author(s):  
A. Nakayama ◽  
M. Einaga ◽  
Y. Tanabe ◽  
S. Nakano ◽  
F. Ishikawa ◽  
...  

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