scholarly journals Thermoelectric Transport in a Three-Dimensional HgTe Topological Insulator

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3364
Author(s):  
Gennady M. Gusev ◽  
Ze D. Kvon ◽  
Alexander D. Levin ◽  
Nikolay N. Mikhailov
Keyword(s):  
Seebeck Coefficient ◽  
Topological Insulator ◽  
Fermi Energy ◽  
Three Dimensional ◽  
Phonon Drag ◽  
Thermoelectric Transport ◽  
Bulk Band ◽  
Theory And Experiment

The thermoelectric response of 80 nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experiment shows that the thermopower is mostly due to the phonon drag contribution. In the region where the 2D Dirac electrons coexist with bulk hole states, the Seebeck coefficient is modified due to 2D electron–3D hole scattering.

scholarly journals Effect of Dilute Magnetism in a Topological Insulator

2021 ◽  
Vol 8 ◽  
Author(s):  
Firoza Kabir ◽  
M. Mofazzel Hosen ◽  
Xiaxin Ding ◽  
Christopher Lane ◽  
Gyanendra Dhakal ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Three Dimensional ◽  
Anomalous Hall Effect ◽  
Photoemission Spectroscopy ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Quantum Matter ◽  
Topological Surface ◽  
Topological Surface State ◽  
Bulk Band ◽  
Dilute Magnetism

Three-dimensional (3D) topological insulator (TI) has emerged as a unique state of quantum matter and generated enormous interests in condensed matter physics. The surfaces of a 3D TI consist of a massless Dirac cone, which is characterized by the Z2 topological invariant. Introduction of magnetism on the surface of a TI is essential to realize the quantum anomalous Hall effect and other novel magneto-electric phenomena. Here, by using a combination of first-principles calculations, magneto-transport and angle-resolved photoemission spectroscopy (ARPES), we study the electronic properties of gadolinium (Gd)-doped Sb2Te3. Our study shows that Gd doped Sb2Te3 is a spin-orbit-induced bulk band-gap material, whose surface is characterized by a single topological surface state. Our results provide a new platform to investigate the interactions between dilute magnetism and topology in magnetic doped topological materials.

scholarly journals Erratum: Magnetotransport signatures of three-dimensional topological insulator nanostructures [Phys. Rev. B 97 , 245429 (2018)]

2021 ◽  
Vol 103 (7) ◽  
Author(s):  
Kristof Moors ◽  
Peter Schüffelgen ◽  
Daniel Rosenbach ◽  
Tobias Schmitt ◽  
Thomas Schäpers ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Three Dimensional

scholarly journals Mobility spectrum analysis on three-dimensional topological insulator BiSbTeSe2

2021 ◽  
Vol 118 (25) ◽  
pp. 253107
Author(s):  
Jimin Wang ◽  
Alexander Kurzendorfer ◽  
Lin Chen ◽  
Zhiwei Wang ◽  
Yoichi Ando ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Spectrum Analysis ◽  
Three Dimensional ◽  
Mobility Spectrum

scholarly journals Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well

2D Materials ◽  
2018 ◽  
Vol 6 (1) ◽  
pp. 014001
Author(s):  
G M Gusev ◽  
O E Raichev ◽  
E B Olshanetsky ◽  
A D Levin ◽  
Z D Kvon ◽  
...  
Keyword(s):  
Quantum Well ◽  
Topological Insulator ◽  
Two Dimensional ◽  
Thermoelectric Transport

Study on Phonon Drag Effect and Phonon Transport in Thin Si-on-Insulator Layers

2015 ◽  
Vol 1117 ◽  
pp. 86-89 ◽  
Author(s):  
Hiroya Ikeda ◽  
Takuro Oda ◽  
Yuhei Suzuki ◽  
Yoshinari Kamakura ◽  
Faiz Salleh
Keyword(s):  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Phonon Scattering ◽  
Phonon Transport ◽  
Infrared Photodetector ◽  
Phonon Drag ◽  
Drag Effect ◽  
Phonon Modes ◽  
Highly Sensitive ◽  
Insulator Layers

The Seebeck coefficient of P-doped ultrathin Si-on-insulator (SOI) layers is investigated for the application to a highly-sensitive thermopile infrared photodetector. It is found that the Seebeck coefficient originating from the phonon drag is significant in the lightly doped region and depends on the carrier concentration with increasing carrier concentration above ~5×1018 cm-3. On the basis of Seebeck coefficient calculations considering both electron and phonon distribution, the phonon-drag part of SOI Seebeck coefficient is mainly governed by the phonon transport, in which the phonon-phonon scattering process is dominant rather than the crystal boundary scattering even in the SOI layer with a thickness of 10 nm. This fact suggests that the phonon-drag Seebeck coefficient is influenced by the phonon modes different from the thermal conductivity.

scholarly journals Exceptional topological insulators

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
M. Michael Denner ◽  
Anastasiia Skurativska ◽  
Frank Schindler ◽  
Mark H. Fischer ◽  
Ronny Thomale ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Three Dimensional ◽  
Surface States ◽  
Exceptional Point ◽  
Weyl Semimetal ◽  
Complex Eigenvalues ◽  
Topological State ◽  
Single Sheet ◽  
Bulk Energy ◽  
State Of Matter

AbstractWe introduce the exceptional topological insulator (ETI), a non-Hermitian topological state of matter that features exotic non-Hermitian surface states which can only exist within the three-dimensional topological bulk embedding. We show how this phase can evolve from a Weyl semimetal or Hermitian three-dimensional topological insulator close to criticality when quasiparticles acquire a finite lifetime. The ETI does not require any symmetry to be stabilized. It is characterized by a bulk energy point gap, and exhibits robust surface states that cover the bulk gap as a single sheet of complex eigenvalues or with a single exceptional point. The ETI can be induced universally in gapless solid-state systems, thereby setting a paradigm for non-Hermitian topological matter.

Quantum capacitance of a three-dimensional topological insulator based on HgTe

2017 ◽  
Vol 43 (4) ◽  
pp. 430-436
Author(s):  
D. A. Kozlov ◽  
D. Bauer ◽  
J. Ziegler ◽  
R. Fischer ◽  
M. L. Savchenko ◽  
...  
Keyword(s):  
Topological Insulator ◽  
Three Dimensional ◽  
Quantum Capacitance
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