scholarly journals Mechanical Structural Design of a Piezoresistive Pressure Sensor for Low-Pressure Measurement: A Computational Analysis by Increases in the Sensor Sensitivity

Sensors ◽  
2018 ◽  
Vol 18 (7) ◽  
pp. 2023 ◽  
Author(s):  
Anh Tran ◽  
Xianmin Zhang ◽  
Benliang Zhu
2011 ◽  
Vol 80-81 ◽  
pp. 693-697
Author(s):  
Chang Hong Ji ◽  
Bin Zhen Zhang ◽  
Jian Zhang ◽  
Xiang Hong Li ◽  
Jian Lin Liu

In order to measure the pressure in the ultra-low temperature condition, the structure of ultra-low temperature piezoresistive pressure sensor is designed. Polysilicon nanometer thin film is used as a varistor according to its temperature and piezoresistive characteristics. The effect of the dimensions of silicon elastic membrane for the sensor sensitivity and the strain dimensions of the elastic membrane are analyzed, then layout position of resistances is arranged. The package structure of pressure sensor is designed. Meanwhile, a low-temperature sensor is designed to compensate the temperature influence to the pressure sensor.


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