scholarly journals Development of Reliable, High Performance WLCSP for BSI CMOS Image Sensor for Automotive Application

Sensors ◽  
2020 ◽  
Vol 20 (15) ◽  
pp. 4077
Author(s):  
Tianshen Zhou ◽  
Shuying Ma ◽  
Daquan Yu ◽  
Ming Li ◽  
Tao Hang
Keyword(s):  
High Performance ◽  
Dynamic Range ◽  
High Reliability ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Automotive Application ◽  
Market Demand ◽  
Wafer Level ◽  
Reliability Performance ◽  
Silicon Vias

To meet the urgent market demand for small package size and high reliability performance for automotive CMOS image sensor (CIS) application, wafer level chip scale packaging (WLCSP) technology using through silicon vias (TSV) needs to be developed to replace current chip on board (COB) packages. In this paper, a WLCSP with the size of 5.82 mm × 5.22 mm and thickness of 850 μm was developed for the backside illumination (BSI) CIS chip using a 65 nm node with a size of 5.8 mm × 5.2 mm. The packaged product has 1392 × 976 pixels and a resolution of up to 60 frames per second with more than 120 dB dynamic range. The structure of the 3D package was designed and the key fabrication processes on a 12” inch wafer were investigated. More than 98% yield and excellent optical performance of the CIS package was achieved after process optimization. The final packages were qualified by AEC-Q100 Grade 2.

Development of Wafer Level Chip Size Packaging Process and its Application to the CMOS Image Sensor Module for Medical Device

2017 ◽  
Vol 137 (2) ◽  
pp. 48-58
Author(s):  
Noriyuki Fujimori ◽  
Takatoshi Igarashi ◽  
Takahiro Shimohata ◽  
Takuro Suyama ◽  
Kazuhiro Yoshida ◽  
...  
Keyword(s):  
Medical Device ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Wafer Level ◽  
Packaging Process ◽  
Sensor Module ◽  
Chip Size

An Over 120dB Dynamic Range Linear Response Single Exposure CMOS Image Sensor with Two-stage Lateral Overflow Integration Trench Capacitors

2020 ◽  
Vol 2020 (7) ◽  
pp. 143-1-143-6 ◽  
Author(s):  
Yasuyuki Fujihara ◽  
Maasa Murata ◽  
Shota Nakayama ◽  
Rihito Kuroda ◽  
Shigetoshi Sugawa
Keyword(s):  
Linear Response ◽  
Dynamic Range ◽  
Signal To Noise Ratio ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Signal To Noise ◽  
Single Exposure ◽  
Two Stage ◽  
Noise Ratio ◽  
Maximum Signal

This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors (LOFITreCs) exhibiting over 120dB dynamic range with 11.4Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70dB. The measured SNR at all switching points were over 35dB thanks to the proposed two-stage LOFITreCs.

A temperature-resistant wide-dynamic-range CMOS image sensor

2007 ◽  
Author(s):  
Koichi Mizobuchi ◽  
Satoru Adachi ◽  
Tomokazu Yamashita ◽  
Seiichiro Okamura ◽  
Hiromichi Oshikubo ◽  
...  
Keyword(s):  
Dynamic Range ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Wide Dynamic Range

A wide dynamic range checkered-color CMOS image sensor with IR-Cut RGB and visible-to-near-IR pixels

2009 ◽  
Author(s):  
Shun Kawada ◽  
Shin Sakai ◽  
Nana Akahane ◽  
Rihito Kuroda ◽  
Shigetoshi Sugawa
Keyword(s):  
Dynamic Range ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Wide Dynamic Range ◽  
Near Ir

scholarly journals [Papers] Single Exposure Type Wide Dynamic Range CMOS Image Sensor With Enhanced NIR Sensitivity

2018 ◽  
Vol 6 (3) ◽  
pp. 195-201 ◽  
Author(s):  
Shunsuke Tanaka ◽  
Toshinori Otaka ◽  
Kazuya Mori ◽  
Norio Yoshimura ◽  
Shinichiro Matsuo ◽  
...  
Keyword(s):  
Dynamic Range ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Single Exposure ◽  
Wide Dynamic Range

A High Dynamic Range CMOS Image Sensor With Dual-Exposure Charge Subtraction Scheme

2015 ◽  
Vol 15 (2) ◽  
pp. 661-662 ◽  
Author(s):  
Xinyuan Qian ◽  
Hang Yu ◽  
Shoushun Chen ◽  
Kay Soon Low
Keyword(s):  
Dynamic Range ◽  
High Dynamic Range ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Subtraction Scheme ◽  
High Dynamic
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