scholarly journals MoS2 Based Photodetectors: A Review

Sensors ◽  
2021 ◽  
Vol 21 (8) ◽  
pp. 2758
Author(s):  
Alberto Taffelli ◽  
Sandra Dirè ◽  
Alberto Quaranta ◽  
Lucio Pancheri
Keyword(s):  
Electric Fields ◽  
Spectral Range ◽  
Performance Metrics ◽  
Transition Metal Dichalcogenides ◽  
Visible Spectral Range ◽  
Detector Performance ◽  
Strong Light ◽  
Near Ultraviolet ◽  
Passivation Layers ◽  
Low Dimensional

Photodetectors based on transition metal dichalcogenides (TMDs) have been widely reported in the literature and molybdenum disulfide (MoS2) has been the most extensively explored for photodetection applications. The properties of MoS2, such as direct band gap transition in low dimensional structures, strong light–matter interaction and good carrier mobility, combined with the possibility of fabricating thin MoS2 films, have attracted interest for this material in the field of optoelectronics. In this work, MoS2-based photodetectors are reviewed in terms of their main performance metrics, namely responsivity, detectivity, response time and dark current. Although neat MoS2-based detectors already show remarkable characteristics in the visible spectral range, MoS2 can be advantageously coupled with other materials to further improve the detector performance Nanoparticles (NPs) and quantum dots (QDs) have been exploited in combination with MoS2 to boost the response of the devices in the near ultraviolet (NUV) and infrared (IR) spectral range. Moreover, heterostructures with different materials (e.g., other TMDs, Graphene) can speed up the response of the photodetectors through the creation of built-in electric fields and the faster transport of charge carriers. Finally, in order to enhance the stability of the devices, perovskites have been exploited both as passivation layers and as electron reservoirs.

scholarly journals Resonant optical Stark effect in monolayer WS2

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Paul D. Cunningham ◽  
Aubrey T. Hanbicki ◽  
Thomas L. Reinecke ◽  
Kathleen M. McCreary ◽  
Berend T. Jonker
Keyword(s):  
Stark Effect ◽  
Transition Metal Dichalcogenides ◽  
Blue Shift ◽  
Coulomb Interactions ◽  
Many Body ◽  
Strong Light ◽  
Metal Dichalcogenides ◽  
Optical Stark Effect ◽  
Superposition States ◽  
Low Dimensional

AbstractBreaking the valley degeneracy in monolayer transition metal dichalcogenides through the valley-selective optical Stark effect (OSE) can be exploited for classical and quantum valleytronic operations such as coherent manipulation of valley superposition states. The strong light-matter interactions responsible for the OSE have historically been described by a two-level dressed-atom model, which assumes noninteracting particles. Here we experimentally show that this model, which works well in semiconductors far from resonance, does not apply for excitation near the exciton resonance in monolayer WS2. Instead, we show that an excitonic model of the OSE, which includes many-body Coulomb interactions, is required. We confirm the prediction from this theory that many-body effects between virtual excitons produce a dominant blue-shift for photoexcitation detuned from resonance by less than the exciton binding energy. As such, we suggest that our findings are general to low-dimensional semiconductors that support bound excitons and other many-body Coulomb interactions.

scholarly journals Modulation of photocarrier relaxation dynamics in two-dimensional semiconductors

2020 ◽  
Vol 9 (1) ◽  
Author(s):  
Yuhan Wang ◽  
Zhonghui Nie ◽  
Fengqiu Wang
Keyword(s):  
Electric Fields ◽  
Mechanical Strain ◽  
Transition Metal Dichalcogenides ◽  
Binding Energies ◽  
Two Dimensional ◽  
Coulomb Interactions ◽  
Relaxation Dynamics ◽  
Strong Light ◽  
2D Semiconductors ◽  
Metal Dichalcogenides

AbstractDue to strong Coulomb interactions, two-dimensional (2D) semiconductors can support excitons with large binding energies and complex many-particle states. Their strong light-matter coupling and emerging excitonic phenomena make them potential candidates for next-generation optoelectronic and valleytronic devices. The relaxation dynamics of optically excited states are a key ingredient of excitonic physics and directly impact the quantum efficiency and operating bandwidth of most photonic devices. Here, we summarize recent efforts in probing and modulating the photocarrier relaxation dynamics in 2D semiconductors. We classify these results according to the relaxation pathways or mechanisms they are associated with. The approaches discussed include both tailoring sample properties, such as the defect distribution and band structure, and applying external stimuli such as electric fields and mechanical strain. Particular emphasis is placed on discussing how the unique features of 2D semiconductors, including enhanced Coulomb interactions, sensitivity to the surrounding environment, flexible van der Waals (vdW) heterostructure construction, and non-degenerate valley/spin index of 2D transition metal dichalcogenides (TMDs), manifest themselves during photocarrier relaxation and how they can be manipulated. The extensive physical mechanisms that can be used to modulate photocarrier relaxation dynamics are instrumental for understanding and utilizing excitonic states in 2D semiconductors.

scholarly journals Correlation Between Corrugation-Induced Flexoelectric Polarization and Conductivity of Low-Dimensional Transition Metal Dichalcogenides

2021 ◽  
Vol 15 (4) ◽  
Author(s):  
Anna N. Morozovska ◽  
Eugene A. Eliseev ◽  
Hanna V. Shevliakova ◽  
Yaroslava Yu. Lopatina ◽  
Galina I. Dovbeshko ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides ◽  
Low Dimensional

scholarly journals A chiral switchable photovoltaic ferroelectric 1D perovskite

2020 ◽  
Vol 6 (9) ◽  
pp. eaay4213 ◽  
Author(s):  
Yang Hu ◽  
Fred Florio ◽  
Zhizhong Chen ◽  
W. Adam Phelan ◽  
Maxime A. Siegler ◽  
...  
Keyword(s):  
Electric Fields ◽  
Mirror Symmetry ◽  
Degrees Of Freedom ◽  
Electrical Measurements ◽  
Temperature Dependent ◽  
Paraelectric Phase Transition ◽  
Strongly Coupled ◽  
Yield Phenomena ◽  
Hybrid Perovskite ◽  
Low Dimensional

Spin and valley degrees of freedom in materials without inversion symmetry promise previously unknown device functionalities, such as spin-valleytronics. Control of material symmetry with electric fields (ferroelectricity), while breaking additional symmetries, including mirror symmetry, could yield phenomena where chirality, spin, valley, and crystal potential are strongly coupled. Here we report the synthesis of a halide perovskite semiconductor that is simultaneously photoferroelectricity switchable and chiral. Spectroscopic and structural analysis, and first-principles calculations, determine the material to be a previously unknown low-dimensional hybrid perovskite (R)-(−)-1-cyclohexylethylammonium/(S)-(+)-1 cyclohexylethylammonium) PbI3. Optical and electrical measurements characterize its semiconducting, ferroelectric, switchable pyroelectricity and switchable photoferroelectric properties. Temperature dependent structural, dielectric and transport measurements reveal a ferroelectric-paraelectric phase transition. Circular dichroism spectroscopy confirms its chirality. The development of a material with such a combination of these properties will facilitate the exploration of phenomena such as electric field and chiral enantiomer–dependent Rashba-Dresselhaus splitting and circular photogalvanic effects.

scholarly journals TiN/(Al,Sc)N metal/dielectric superlattices and multilayers as hyperbolic metamaterials in the visible spectral range

2014 ◽  
Vol 90 (12) ◽  
Author(s):  
Bivas Saha ◽  
Gururaj V. Naik ◽  
Sammy Saber ◽  
Cem Akatay ◽  
Eric A. Stach ◽  
...  
Keyword(s):  
Spectral Range ◽  
Visible Spectral Range ◽  
Hyperbolic Metamaterials

scholarly journals Plasmonic lattice Kerker effect in ultraviolet-visible spectral range

2021 ◽  
Vol 103 (3) ◽  
Author(s):  
V. S. Gerasimov ◽  
A. E. Ershov ◽  
R. G. Bikbaev ◽  
I. L. Rasskazov ◽  
I. L. Isaev ◽  
...  
Keyword(s):  
Spectral Range ◽  
Visible Spectral Range
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