Faculty Opinions recommendation of High oxygen partial pressure decreases anemia-induced heart rate increase equivalent to transfusion.

2012 ◽  
Author(s):  
Suzanne Karan
Keyword(s):  
Heart Rate ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Rate Increase ◽  
High Oxygen ◽  
Heart Rate Increase ◽  
High Oxygen Partial Pressure

Accumulation of bialaphos intermediates under high oxygen partial pressure and their conversion to bialaphos

1991 ◽  
Vol 71 (6) ◽  
pp. 433-435 ◽  
Author(s):  
Hidehi Takebe ◽  
Osamu Hiruta ◽  
Mihoko Matsunaga ◽  
Atsuyuki Satoh ◽  
Hideo Tanaka
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
High Oxygen ◽  
High Oxygen Partial Pressure

Microstructures in (Y0.95Ca0.05)Ba2Cu4O8 prepared by low and high oxygen partial pressure techniques

1990 ◽  
Vol 169 (3-4) ◽  
pp. 289-293 ◽  
Author(s):  
Koji Yamaguchi ◽  
Takayuki Miyatake ◽  
Takahiro Wada ◽  
Nobuo Suzuki ◽  
Tsutomu Takata ◽  
...  
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
High Oxygen ◽  
High Oxygen Partial Pressure

AgO Doped YBa2Cu4O8 Superconductor Under High Oxygen Partial Pressure

1991 ◽  
Vol 251 ◽  
Author(s):  
Yuichi Sawai ◽  
K. Ishizaki ◽  
M. Takata ◽  
A. Kuzjukevics
Keyword(s):  
Critical Temperature ◽  
Critical Current Density ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Critical Current ◽  
Current Density ◽  
High Oxygen ◽  
Silver Doping ◽  
High Oxygen Partial Pressure ◽  
Pressing Method

ABSTRACTGeneraly silver doping into YBa2Cu3O7 superconductor improves the critical temperature and critical current density. In this work the silver peroxide was doped into YBa2Cu4O8 superconductor and sintered by the Oxygen Hot Isostatically Pressing method. The critical temperature of the 124 phase increased by silver peroxide doping.

Structure and photoresponse characteristics of ZnO thin films grown at high oxygen partial pressure

2007 ◽  
Vol 308 (1) ◽  
pp. 1-4 ◽  
Author(s):  
Yanfei Gu ◽  
Xiaomin Li ◽  
Junliang Zhao ◽  
Weidong Yu ◽  
Xiangdong Gao
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
High Oxygen ◽  
Zno Thin Films ◽  
High Oxygen Partial Pressure

Effect of oxygen partial pressure during pulsed laser deposition on the orientation of CeO2 thin films grown on (100) silicon

2003 ◽  
Vol 18 (8) ◽  
pp. 1753-1756 ◽  
Author(s):  
Woong Choi ◽  
Tim Sands
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Oxygen ◽  
Laser Deposition ◽  
High Oxygen Partial Pressure ◽  
Grain Structures ◽  
Effect Of Oxygen

The effect of oxygen partial pressure on the preferred orientation of CeO2 thin films was investigated by depositing CeO2 thin films and Pb(Zr, Ti)O3/CeO2 multilayers on Si (100) substrates by pulsed laser deposition. CeO2 thin films exhibited random polycrystalline grain structures at high oxygen partial pressure (≥40 mtorr), a result that is contrary to previous reports. The relationship of the preferred orientations observed between Pb(Zr, Ti)O3 films and the CeO2 layer underneath confirmed that random polycrystalline CeO2 was obtained at high oxygen partial pressure. It was suggested that x-ray diffraction data in previous reports might have been misinterpreted.

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