Technological support of crack resistance of silicon carbide plates during diamond-abrasive processing

2021 ◽  
pp. 46-48
Author(s):  
Keyword(s):  
Silicon Carbide ◽  
Crack Resistance ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Semiconductor Devices ◽  
Technological Support ◽  
Ceramic Components ◽  
Processing Modes ◽  
Diamond Abrasive

A method is proposed for assigning diamond-abrasive processing modes that provide the required material removal rate and crack resistance of silicon carbide plates, taking into account the stresses arising in the manufacture of a product from the considered ceramic components, in order to reduce scrap in the production of semiconductor devices. Keywords:microcracks, diamond-abrasive processing, silicon carbide plates. [email protected]

Study on Chemical Mechanical Polishing Parameters of 6H-SiC Crystal Substrate Based on Diamond Abrasive

2013 ◽  
Vol 797 ◽  
pp. 261-265 ◽  
Author(s):  
Jian Xiu Su ◽  
Zhu Qing Zhang ◽  
Jian Guo Yao ◽  
Li Jie Ma ◽  
Qi Gao Feng
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Rotational Velocity ◽  
Crystal Substrate ◽  
Polishing Pressure ◽  
Diamond Abrasive ◽  
Abrasive Size

In this paper, according to the slurry ingredients obtained by former research, the influences of the chemical mechanical polishing (CMP) process parameters, such as the rotational velocity of the platen and the carrier, the polishing pressure and the abrasive size on the material removal rate (MRR) and surface roughness Ra have been studied in CMP SiC crystal substrate (0001) C and (0001) Si surface based on the diamond abrasive. The research results show that the material removal rate changes with the change of the abrasive size, the rotational velocity of the platen and the polishing pressure significantly, but the maximum of MRR can be obtained at a certain rotational velocity of platen, abrasive size and polishing pressure. The influence of the abrasive size, the platen velocity, the carrier velocity and the polishing pressure on surface roughness is no significant. Under the same conditions, the MRR of CMP the Si surface is larger than that of the C surface. This study results will provide the reference for optimizing the process parameters and researching the material removal mechanism in CMP SiC crystal substrate.

Multi-Objective Optimization of PMEDM Process of 90CrSi Alloy Steel for Minimum Electrode Wear Rate and Maximum Material Removal Rate with Silicon Carbide Powder

2021 ◽  
Vol 1018 ◽  
pp. 51-58
Author(s):  
Tran Thi Hong ◽  
Nguyen Van Cuong ◽  
Bui Thanh Danh ◽  
Le Hong Ky ◽  
Nguyen Hong Linh ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Alloy Steel ◽  
Process Parameters ◽  
Material Removal Rate ◽  
Material Removal ◽  
Electrical Discharge Machining ◽  
Removal Rate ◽  
Carbide Powder ◽  
Electrode Wear ◽  
Silicon Carbide Powder

This study aims to minimize electrode wear (EW) and maximize material removal rate (MRR) in powder mixed electrical discharge machining (PMEDM) process of 9CrSi alloy steel with silicon carbide powder. To achieve these objectives, Taguchi method and Grey Relational Analysis (GRA) are applied to optimize one two-level and four three-level PMEDM process parameters, including Ton, Toff, CP, IP and SV in eighteen experiments based on an orthogonal array L18 (21 and 43). Results have provided a set of optimal PMEDM process parameters in which Ton has the strongest effect on SW and MRR while that of CP is insignificant. The obtained minimum EW and maximum MRR have been verified and proven by a PMEDM experiment using optimal process parameters. The proposed method can be further applied to optimize other PMEDM process parameters for different objectives.

Selectivity and Residual Damage of Colloidal Silica Chemi-Mechanical Polishing of Silicon Carbide

2006 ◽  
Vol 527-529 ◽  
pp. 1095-1098 ◽  
Author(s):  
J.R. Grim ◽  
Marek Skowronski ◽  
W.J. Everson ◽  
V.D. Heydemann
Keyword(s):  
Silicon Carbide ◽  
Material Removal Rate ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Subsurface Damage ◽  
Mechanical Polishing ◽  
Polished Surface ◽  
Process Conditions ◽  
Plan View

The selectivity, material removal rate, and the residual subsurface damage of colloidal silica (CS) chemi-mechanical polishing (CMP) of silicon carbide substrates was investigated using atomic force microscopy (AFM) and plan view transmission electron microscopy (TEM). Silica CMP, in most process conditions, was selective. In the damage region surrounding remnant scratches, the vertical material removal rate exceeded the planar material removal rate, which resulted in an enhancement of the scratches over the duration of the polishing process. The material removal rate was low, about 20 nm / hr. In addition, the selectivity leads to a slow removal of residual subsurface damage from mechanical polishing. The silica CMP polished surface exhibits significant subsurface damage observed by plan view TEM even after prolonged polishing of 16 hours.

Effect of Surfactant on EDM of Low Conductivity Reaction-Bonded Silicon Carbide

2016 ◽  
Vol 701 ◽  
pp. 107-111
Author(s):  
Muhammad Raziman Abdul Razak ◽  
Pay Jun Liew ◽  
Nur Izan Syahriah Hussein ◽  
Qumrul Ahsan
Keyword(s):  
Surface Roughness ◽  
Silicon Carbide ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Electrode Wear ◽  
Weight Percentage ◽  
Wear Ratio ◽  
Optimum Weight ◽  
Span 80

This work was focused on improving machining performance of reaction-bonded silicon carbide (RB-SiC) ceramic material using an electrical discharge machine (EDM) with the aid of surfactant. The changes of material removal rate, electrode wear ratio and surface roughness were investigated under two different surfactants, namely Span 20 and Span 80. The surfactant was mixed with carbon nanofiber (CNF) and EDM oil prior to the experiment. Then, the mixture was homogenized in an ultrasonic homogenizer for 35 minutes. In order to investigate the effect of surfactant, different weight percentages which is 0.4wt%, 0.6wt% and 0.8wt% of surfactant were used. The experimental results show that with the addition of Span 20 and Span 80, the electrode wear ratio was decreased with the increased of surfactants weight percentage. Surface finish also can be improved by adding surfactant in the dielectric fluid. The lowest surface roughness was achieved at a surfactant weight percentage of 0.4wt%. The optimum weight percentage for obtaining the highest material removal rate (MRR) was 0.6wt% for both surfactants. In comparison, CNF added with surfactant Span 80 was more effective to improve the machining efficiency of RB-SiC compared to surfactant Span 20, at the optimum weight percentage 0.6wt%.

scholarly journals An integrated approach for the modelling of silicon carbide components laser milling process

2021 ◽  
Author(s):  
Claudio Leone ◽  
Silvio Genna ◽  
Vincenzo Tagliaferri
Keyword(s):  
Silicon Carbide ◽  
Process Parameters ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Integrated Approach ◽  
Milling Process ◽  
Roughness Parameters ◽  
Laser Milling ◽  
Pulsed Fiber Laser

AbstractThe paper deals with characterisation and modelling of laser milling process on silicon carbide hard ceramic. To this end, a Yb:YAG pulsed fiber laser was adopted to mill silicon carbide bars. Square pockets, 5×5 mm2 in plane dimension, were machined at the maximum nominal average power (30W), under different laser process parameters: pulse frequency, scan speed, hatching distance, repetitions and scanning strategy. After machining, the achieved depth and the roughness parameters were measured by way of digital microscopy and 3D surface profiling, respectively. In addition, the material removal rate was calculated as the ratio between the removed volume/process time. Analysis of variance (ANOVA) was adopted to assess the effect of the process parameters on the achieved depth, the material removal rate (MRR) and roughness parameters, while response surface methodology (RSM) and artificial neuronal networks (ANNs) were adopted to model the process behaviours. Results show that both RSM and ANNs fault in MRR and RSm roughness parameters modelling. Thus, an integrated approach was developed to overcome the issue; the approach is based on the use of the RSM model to obtain a hybrid Training dataset for the ANNs. The results show that the approach can allow improvement in model accuracy.

scholarly journals An Integrated Approach for the Modelling of Silicon Carbide Components Laser Milling Process

2021 ◽  
Author(s):  
Claudio Leone ◽  
Silvio Genna ◽  
Vincenzo Tagliaferri
Keyword(s):  
Silicon Carbide ◽  
Process Parameters ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Integrated Approach ◽  
Milling Process ◽  
Roughness Parameters ◽  
Laser Milling ◽  
Pulsed Fiber Laser

Abstract The paper deals with characterisation and modelling of laser milling process on Silicon Carbide hard ceramic. To this end, a Yb:YAG pulsed fiber laser was adopted to mill Silicon Carbide bars. Square pockets, 5x5 mm2 in plane dimension, were machined at the maximum nominal average power (30W), under different laser process parameters: pulse frequency, scan speed, hatching distance, repetitions and scanning strategy. After machining, the achieved depth and the roughness parameters were measured by way of digital microscopy and 3D surface profiling, respectively. In addition, the material removal rate was calculated as the ratio between the removed volume/process time. ANalysis Of VAriance (ANOVA) was adopted to assess the effect of the process parameters on the achieved depth, the material removal rate (MRR) and roughness parameters, while Response Surface Methodology (RSM) and Artificial Neuronal Networks (ANNs) were adopted to model the process behaviours. Results show that both RSM and ANNs fault in MRR and RSm roughness parameters modelling. Thus, an integrated approach was developed to overcome the issue; the approach is based on the use of the RSM model to obtain a hybrid Training dataset for the ANNs. The results show that the approach can allow improvement in model accuracy.

Precision Abrasive Jet Finishing of Cemented Carbide

2005 ◽  
Vol 291-292 ◽  
pp. 371-376 ◽  
Author(s):  
T. Saito ◽  
S. Ito ◽  
Y. Mizukami ◽  
O. Horiuchi
Keyword(s):  
Silicon Carbide ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Cemented Carbide ◽  
Abrasive Jet Machining ◽  
Series Of Experiments ◽  
Grinding Machine ◽  
Glass Lenses ◽  
Collision Angle

Recently a technique has been developed to mold aspheric glass lenses by using cemented carbide dies at elevated temperature. The dies are precisely ground by an ultraprecision grinding machine. However the obtained form accuracy is generally around 100nm and is not enough high. In this study, to investigate a possibility of corrective figuring of the dies, a series of experiments of abrasive jet machining of cemented carbide was conducted and fundamental machining characteristics were examined. The used abrasives were fine grains of silicon carbide and aluminum oxide. The silicon carbide abrasives could accomplish a sufficient material removal. Both the material removal rate and the surface roughness increase as the collision angle increases up to 90 degrees. Therefore, in order to obtain a smooth surface finish, it was necessary to take a smaller collision angle and to slow down the material removal rate.

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