Фазовый состав и структура пленки BiFeO-=SUB=-3-=/SUB=-, выращенной на подложке MgO(001) методом ВЧ-катодного распыления в атмосфере O-=SUB=-2-=/SUB=-

The crystal structure and Mossbauer spectroscopy studies results for BiFeO3 film growth on the MgO(001) single crystal substrate are present in the paper. It been shown that film have high crystal perfection and low defectiveness which results in appearing of narrow lines during the θ-2θ and φ scanning and the small (lower than 0.7°) disorientation of film and substrate crystal axes. It is been revealed that unit cell of BiFeO3/MgO(001) heterostructure possess monoclinic symmetry and deformation of unit cell is negligible. The Mossbauer study shows that magnetic subsystem of film has spatial spin-modulated structure with zero value of anharmonicity parameter (m). This indicate that at room temperature the magnetic anisotropy changes from the "easy axis" type to "easy plane" type.

Wafer-scale single-orientation 2D layers by atomic edge-guided epitaxial growth

We provide a systematic summary of the critical factors—including crystal/substrate symmetry and energy consideration—necessary for synthesizing single-orientation 2D layers.

Study on the Mechanism of Solid-Phase Oxidant Action in Tribochemical Mechanical Polishing of SiC Single Crystal Substrate

Na2CO3—1.5 H2O2, KClO3, KMnO4, KIO3, and NaOH were selected for dry polishing tests with a 6H-SiC single crystal substrate on a polyurethane polishing pad. The research results showed that all the solid-phase oxidants, except NaOH, could decompose to produce oxygen under the frictional action. After polishing with the five solid-phase oxidants, oxygen was found on the surface of SiC, indicating that all five solid-phase oxidants can have complex tribochemical reactions with SiC. Their reaction products are mainly SiO2 and (SiO2)x. Under the action of friction, due to the high flash point temperature of the polishing interface, the oxygen generated by the decomposition of the solid-phase oxidant could oxidize the surface of SiC and generate a SiO2 oxide layer on the surface of SiC. On the other hand, SiC reacted with H2O and generated a SiO2 oxide layer on the surface of SiC. After polishing with NaOH, the SiO2 oxide layer and soluble Na2SiO3 could be generated on the SiC surface; therefore, the surface material removal rate (MRR) was the highest, and the surface roughness was the largest, after polishing. The lowest MRR was achieved after the dry polishing of SiC with KClO3.

Optical properties of Er: LiNbO3 ceramics on Yb, Er: LiNbO3 substrate

The present research focuses on the study of the polarization and temperature dependences of the luminescent kinetic spectral properties of Er: LiNbO3 ceramics deposited on Yb,Er: LiNbO3 crystal substrate by laser ablation.

Investigation of the deposition of calcium fluoride nanoparticles on the chips of CaF2 single crystals

The deposition of calcium fluoride nanoparticles on single crystal chips of calcium fluoride was studied. CaF2 nanoparticles were synthesized by co-precipitation from aqueous nitrate solutions using hydrofluoric acid as a fluorinating agent at a batch system. The prepared samples were examined by atomic force microscopy, scanning electron microscopy, transmission electron microscopy and optical transmission. There is an inhomogeneous coating of the substrate surface with submicron particles of about 100–150 nm in size, which are clusters of nanoparticles of 15-20 nm in size. The initial nanoparticles coherently grow on the surface of the crystal substrate. Heat treatment of the substrate-deposited layer composite at 600 °C leads to the coalescence of submicron particles and the formation of a porous layer of a complex structure.

Giant Wrinkles on the Surface of Epitaxial BaTiO3 Thin Films with Drastic Shrinkage during Transfer from a MgO(100) Single-Crystal Substrate to a Flexible Polyethylene Terephthalate Sheet

The transfer of ferroelectric and piezoelectric BaTiO3 epitaxial thin films from an original MgO(100) single-crystal substrate to a polyethylene terephthalate (PET) sheet has been studied to fabricate flexible epitaxial functional oxides. The outline of our previous transfer process is as follows: the epitaxial BaTiO3 thin films were deposited on the MgO(100). Then, the surface of the BaTiO3 was adhered onto a PET sheet. Finally, only the MgO(100) substrate was dissolved in a phosphoric aqueous solution, which resulted in the transfer of the epitaxial BaTiO3 thin film from the MgO(100) to a PET sheet. To establish this transfer process, our aim was to prevent any damage, such as cracks and exfoliation, during the transfer of the epitaxial functional oxides. We found that a Pt buffer layer with a ductile nature was effective for improving the quality of transferred epitaxial BaTiO3 thin films. Moreover, the epitaxial BaTiO3 thin films showed a drastic shrinkage of ca. 10%. The surfaces of the shrunk, epitaxial BaTiO3 thin films showed giant wrinkles with a micrometer-order amplitude and a 10-μm-order periodicity without any damage. The epitaxial BaTiO3 thin films with giant wrinkles, accompanied by drastic shrinkage, are similar to the thin films that are coated on a pre-stretched elastomer, which is one of the fabrication processes of stretchable devices.

Optical Properties of Monocrystalline Silicon Nanowires

The paper presents the results of a study of the optical reflection and transmission spectra of a silicon single crystal p-Si (100) with silicon nanowires grown on both sides and porous silicon p-Si (100) on a single crystal substrate in the spectral range 0.2 ÷ 1.7 μm. The layers of nanowires had a thickness of 5.5 µm, 20 µm, 50 µm and a porosity of 60 %. The porous silicon layers had a thickness of 5 μm, 50 μm and a porosity of 45 %, 55 % and 65 %. The change in the energy band structure in single-crystal silicon nanowires and in a single-crystal matrix of porous silicon is shown.

The Influence of the Preheating Temperature of the (−2 0 1) β-Ga2O3 Substrates on c-Plane GaN Epitaxial Growth

In this paper, we demonstrate the direct epitaxial growth of c-plane GaN on a preheated (−2 0 1) β-Ga2O3 single-crystal substrate with no interlayer or pre-patterning processes by using the atmospheric pressure metalorganic chemical vapor deposition method. The results show that high-temperature preheating (>500 °C) can modify the surface morphology of the substrate so that the crystalline quality of the grown GaN layer can be improved. With higher preheated temperatures, the grown GaN layer reveals smaller FWHM (full width at half-​maximum) of the X-ray rocking curve. In addition, we find that the photoluminescence spectra of the GaN layers reveal their narrowest linewidth at a preheated temperature of 800 °C. These results support improvements of crystalline quality and provide optimization of a c-GaN grown epitaxially on the preheated (−2 0 1) β-Ga2O3 substrates for further device fabrication.