Spectroscopic Characterization of Boron Doped Tetrahedral Amorphous Carbon

2008 ◽  
Vol 23 (1) ◽  
pp. 180-184 ◽  
Author(s):  
Hua-Yu ZHANG
2008 ◽  
Vol 43 (2) ◽  
pp. 453-462 ◽  
Author(s):  
Manlin Tan ◽  
Jiaqi Zhu ◽  
Jiecai Han ◽  
Wei Gao ◽  
Aiping Liu ◽  
...  

1998 ◽  
Vol 508 ◽  
Author(s):  
Kimon C. Palinginis ◽  
A. Ilie ◽  
B. Kleinsorge ◽  
W.I. Milne ◽  
J. D. Cohen

AbstractWe report the results of junction capacitance measurements on thin tetrahedral amorphous carbon (ta-C) films to deduce their defect densities. We find defect densities in the range 3 - 7 × 1017 cm−3 in the undoped ta-C films, and roughly an order of magnitude larger in the nitrogen doped (n-type) films. In some cases fairly uniform defect profiles were obtained covering a thickness of a couple of hundreds angstroems. We also observed a thermal activation process of carriers from defect states at the ta-C/c-Si interface with an activation energy in the range of 0.4eV to 0.5eV.


2009 ◽  
Vol 48 (6) ◽  
pp. 065501 ◽  
Author(s):  
Omvir Singh Panwar ◽  
Mohd. Alim Khan ◽  
Mahesh Kumar ◽  
Sonnada Math Shivaprasad ◽  
Bukinakere Subbakrihniah Satyanarayana ◽  
...  

2005 ◽  
Vol 472 (1-2) ◽  
pp. 180-188 ◽  
Author(s):  
O.S. Panwar ◽  
B. Deb ◽  
B.S. Satyanarayana ◽  
Mohd. Alim Khan ◽  
R. Bhattacharyya ◽  
...  

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